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EC2612 Datasheets (4)

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United Monolithic Semiconductors

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EC2612		United Monolithic Semiconductors	40GHz Super Low Noise PHEMT	Original	PDF	112.41KB	8
EC2612-99F/00		United Monolithic Semiconductors	40GHz Super Low Noise PHEMT	Original	PDF	128.1KB	8
EC2612-99F/00		United Monolithic Semiconductors	40GHz superlow noise PHEMT	Original	PDF	112.41KB	8
EC2612-99X/00		United Monolithic Semiconductors	40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor	Original	PDF	154.68KB	11

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Sensata Circuit Breakers


Sensata Circuit Breakers APGN1-1REC2-61-262 Circuit Breakers
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Sensata Circuit Breakers UPG1-1REC2-61-202-A-00 Circuit Breakers
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EC2612 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ec2612 phemt Abstract: EC2612 Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm	Original	ec2612 40ghz 18ghz dsec26120077 +2-17-marc-00 ec2612 phemt	PDF
ec2612 phemt Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814 Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm	Original	ec2612 40ghz 18ghz dsec26120077 +5-17-mar-00 ec2612 phemt phemt transistor 30ghz mar 618 transistor ls 9814	PDF
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm	Original	ec2612 40ghz 18ghz dsec26120077 +1-17-mar-00	PDF
pHEMT transistor 30GHz Abstract: EC2612 ec2612 pHEMT 158467 Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low	Original	ec2612 40ghz 18ghz dsec26120077 +4-17-marc-00 phemt transistor 30ghz ec2612 phemt 158467	PDF
EC2612 Abstract: ec2612 pHEMT MAR 618 transistor Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm	Original	ec2612 40ghz 18ghz dsec26120077 +3-17-mar-00 ec2612 phemt mar 618 transistor	PDF
ec2612 pHEMT Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low	Original	ec2612 40ghz 18ghz dsec26128099 +3ec2612 phemt phemt transistor 30ghz transistor 30ghz	PDF
PPH25X Contextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14	Original	pph25x	PDF