FPD1500DFN Search Results

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

SSG 23 TRANSISTOR

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)

FILTRONIC CROSS REFERENCE

Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant

FPD1500DFN

Abstract: FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE 1850 MHz ♦ 27 dBm Output Power (P1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Featuring Lead Free Finish Package

FPD1500DFN

Abstract: FPD750SOT89 MIL-HDBK-263 EB1500DFN-BA EB1500DFN-BB Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant

FPD1500DFN

Abstract: SSG 23 TRANSISTOR stu 407 FPD1500 FPD750SOT89 w300 STU 390 SSG TRANSISTOR NE 3160
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features „ „ „ „ Optimum Technology Matching Applied „ GaAs HBT 27dBm Output Power P1dB @ 1.85GHz

BC 148 TRANSISTOR DATASHEET

Abstract: MIL-HDBK-263 FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89
Contextual Info: FPD1500DFN Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 RoHS compliant

FPD1500DFN

Abstract: FPD750DFN FPD750SOT89
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

si 4422

Abstract: FPD1500DFN FPD750DFN FPD750SOT89 Z624 Z5 1512
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied „ „ „ „ GaAs HBT 24dBm Output Power P1dB at 1.85GHz

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a