2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
|
Original
|
mos200403h02n60o-252200oc+15183oc217oc260oc245och02n60i2n60 transistorall transistor 2n60transistor 2n6002n602n60mosfet mark y2y1 marking code transistor2n60 application2n60 mosfetmarking code diode 648
|
PDF
|
MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
Contextual Info: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab
|
Original
|
mos200504h02n60so-252200oc+15183oc217oc260oc245och02n60simosfet mark y2y1 marking code transistormarking code diode 648pb40 bridgemosfet k 61 y1mosfet sn60transistor mark code h1diode marking code a2 y22n60smarking code 749
|
PDF
|
02n60
Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
|
Original
|
mos200403h02n60o-252200oc+14183oc217oc260oc245och02n60i02n60all transistor 2n602n602n60 transistorpb40 bridge2n60 applicationmosfet mark h1tl 434h02n60e
|
PDF
|
MOSFET MARK y2
Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor
|
Original
|
mos200501h01n60s183oc217oc+12260oc245oc10sech01n60simosfet mark y2transistor mark code t101n60y1 marking code transistormosfet mark h1marking code n60mosfet y1transistor mark code h1
|
PDF
|
MOSFET MARK y2
Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
|
Original
|
mos200502h01n60200oc183oc+13217oc260oc245oc10secmosfet mark y2mosfet k 61 y1mosfet y1mosfet mark h1marking code k1marking y1h01n60imarking a1 transistorpb40
|
PDF
|
MOSFET MARK y2
Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
|
Original
|
mos200501h01n60s200oc183oc+13217oc260oc245oc10secmosfet mark y2mosfet mark h1marking code k1marking a1 transistormarking y1mosfet k 61 y1mosfet y1pb40h01n60si
|
PDF
|
MOSFET MARK y2
Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
|
Original
|
mos200501h01n60s200oc183oc+8217oc260oc245och01n60sih01n60sjmosfet mark y2mosfet mark h1mosfet y1
|
PDF
|
MOSFET MARK y2
Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
|
Original
|
mos200502h01n60200oc183oc+9217oc260oc245och01n60ih01n60jmosfet mark y2mosfet mark h1tl 434mosfet sn60
|
PDF
|
4n60c
Abstract: 4N60 application note br 4n60 4N60 transistor 342 pf mosfet 4n60 4n60e 04N60C H04N60 H04N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2007.07.17 Page No. : 1/6 MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A
|
Original
|
mos200404h04n60o-263o-220ab+1210sech04n60uh04n60eh04n60f4n60c4n60 application notebr 4n604n60transistor 342 pfmosfet 4n604n60e04n60c
|
PDF
|
transistor 6n60
Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
Contextual Info: HI-SINCERITY Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 MICROELECTRONICS CORP. H06N60 Series H06N60 Series Pin Assignment 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
|
Original
|
mos200402h06n60o-263spee80+11183oc217oc260och06n60uh06n60etransistor 6n606n60h06n60f06n60marking code 749pb40
|
PDF
|
SOLID TRANSISTOR
Abstract: h04n65 tp1030
Contextual Info: HI-SINCERITY Spec. No. : MOS200802 Issued Date : 2008.07.22 Revised Date :2009.03.23 Page No. : 1/6 MICROELECTRONICS CORP. H04N65 Series H04N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 650V, 4A
|
Original
|
mos200802h04n65o-220abo-220fp+7183oc217oc240oc260oc245ocsolid transistortp1030
|
PDF
|
H02N65
Abstract: H02N60E H02N60F h02n
Contextual Info: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor
|
Original
|
mos200910h02n65o-220ab183oc+7217oc260oc245oc10sech02n60eh02n60fh02n
|
PDF
|
br 4n60
Abstract: H04N60 4N60 application note H04N60F 4N60 transistor 4N60 H04N60E mosfet 4n60
Contextual Info: HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
|
Original
|
mos200404h04n60o-220abo-220fp+12200oc183oc217oc260oc245ocbr 4n604n60 application noteh04n60f4n60 transistor4n60h04n60emosfet 4n60
|
PDF
|
h07n65
Contextual Info: HI-SINCERITY Spec. No. : MOS200801 Issued Date : 2008.07.22 Revised Date : 2009.0514 Page No. : 1/6 MICROELECTRONICS CORP. H07N65 Series H07N65 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
|
Original
|
mos200801h07n65o-220ab183oc+4217oc260oc10sech07n65e
|
PDF
|
|
|
05n60
Abstract: 5N60 H05N60 H05N60E H05N60F 05N6
Contextual Info: HI-SINCERITY Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H05N60 Series H05N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
|
Original
|
mos200603h05n60o-220abo-220fp+10200oc183oc217oc260oc245oc05n605n60h05n60eh05n60f05n6
|
PDF
|
*07n60
Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
|
Original
|
mos200604h07n60o-220ab183oc+8217oc260oc10sech07n60e07n60mosfet 600v 10a to-220abh07n60fmarking code diode 648
|
PDF
|
7n6 TRANSISTOR
Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
Contextual Info: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
|
Original
|
mos200604h07n60o-220ab183oc+12217oc260oc10sech07n60e7n6 transistormarking 7n6 transistortransistor 7n607n60marking 7n6 mosfet7n6 diodeh07n60fmarking code pb
|
PDF
|
edi pb20
Abstract: PB10 MINIBRIDGE PB40 MINIBRIDGE PA40 MINIBRIDGE MINIBRIDGE PB05 MINIBRIDGE pa05 edi pb10 pb60 minibridge edi PB60 minibridge PB40
Contextual Info: o c m to ï - r. : f ELECTRONIC DEVICES, INC. PA PB PW . AN A M E R IC A N ELECTR O N IC C O M P O N E N T S C O M P A N Y 31 GRAY OAKS AVENUE • YONKERS. NEW YO RK 10710 S1 -4-965-4400 • FAX 914-9B5-5531 • TELEX 681-8047 MINIBRIDGE 15, 25, 30 AMPERES
|
OCR Scan
|
914-s65-5531bb1-bq47pa100pb100+11pw100edi pb20pb10 minibridgepb40 minibridgepa40 minibridgeminibridge pb05minibridge pa05edi pb10pb60 minibridgeedi pb60minibridge pb40
|
PDF
|
edi pb20
Abstract: PB40 full wave bridge EDI PB05 edi pa60 bridge edi pb10 edi PB60 EDI PB60 bridge edi pb40 PB80 edi edi pw10
Contextual Info: lÄnt-RICAN/ ELECTRONIC^ D3~ Dt , 7b?4B ODDONE 3 SERIES Pk PB PW ELECTRONIC DEVICES, INC. A N A M E R IC A N E L E C T R O N IC C O M P O N E N T S C O M P A N Y 3 1 GRAY OAKS AVENUE • YONKERS. N E W YORK 1 0 7 1 0 0 1 . 4 - 0 8 5 - 4 4 0 0 • FAX 0 1 4 - 0 B 5 - 5 5 3 1 • T ELEX B B 1 - B Q 4 7
|
OCR Scan
|
pa100pb100pw100edi pb20+9pb40 full wave bridgeedi pb05edi pa60 bridgeedi pb10edi pb60edi pb60 bridgeedi pb40pb80 ediedi pw10
|
PDF
|
OB2268
Abstract: ob2269 SG6841 LCD SG6841 SG6842 OB2268 SG6841 SG6842J OB226 LD7552 ob2268 equivalent
Contextual Info: Page No. : 1/1 RS2042 Green-Power PWM Controller with Freq. Jittering Description The RS2042 is a low startup current, low cost, current mode PWM controller with Green-Power & burst-mode power-saving operation. The integrated functions such as the leading-edge blanking of the current sensing, internal slope compensation
|
Original
|
rs2042ds-rs2042-01ob2268ob2269+8sg6841 lcdsg6841sg6842ob2268 sg6841sg6842job226ld7552ob2268 equivalent
|
PDF
|
CR1206 vishay
Abstract: pin configuration 500K variable resistor zener diodes color coded capacitor 106 35K CR0002 vishay interactive pin diagram 1K variable resistor diode AG2 12S50 202 variable resistor
Contextual Info: VISHAY INTE R TECHNO L O G Y , INC . INTERACTIVE data book thick film products vishay techno vse-db0003-0608 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
vse-db0003-0608cr1206 vishaypin configuration 500k variable resistorzener diodes color coded+7capacitor 106 35kcr0002vishay interactivepin diagram 1k variable resistordiode ag212s50202 variable resistor
|
PDF
|
C495 transistor
Abstract: r3272 MB2100H SN74LVC244A 14pin mc-156 32,768khz m1535d M1535 ah1 c541 c5470 EG-2121CA-125
Contextual Info: 4 3 2 1 D C B A D PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE PAGE
|
Original
|
vcc12virfl9110ml310c495 transistor+9r3272mb2100hsn74lvc244a 14pinmc-156 32,768khzm1535dm1535ah1 c541c5470eg-2121ca-125
|
PDF
|
M88E1111 ETHERNET
Abstract: c828 transistor datasheet M88E1111 M88E1111 datasheet c828 transistor transistor c828 XTAL_MA506 c828 datasheet c828 C641 transistor pinout
Contextual Info: 4 3 2 1 D D NOTE: PLEASE REVIEW THE ML410 BOM FOR ITEMS DESIGNATED AS "NOSTUFF". NOSTUFF ITEMS ARE NOT POPULATED ON THE PCB. C C THE ML410 BOM CONTAINS THE MOST ACCURATE INFORMATION ABOUT NOSTUFF DISCRETES AND COMPONENTS. XILINX PART NUMBERS B SCHEMATICS 0381203
|
Original
|
ml410pci164afx100220uf+10m88e1111 ethernetc828 transistor datasheetm88e1111m88e1111 datasheetc828 transistortransistor c828xtal_ma506c828 datasheetc828c641 transistor pinout
|
PDF
|
IEC 384
Abstract: h337 h3475 p2335 Wiring Diagram Siemens Logo siemens foil capacitor matsua saw p233 p3106 Ta2O5 phase diagram
Contextual Info: Contents Overview of Types 5 9 Chip Capacitors 11 General Technical Information 43 Quality Assurance 61 Measuring and Test Conditions Soldering Conditions 75 76 Taping, Packing and Weights 83 Subject Index Symbols and Terms 86 88 SBS-15.4 01.09.1996 17:58 Uhr
|
Original
|
sbs-15iec 384h337h3475+7p2335wiring diagram siemens logosiemens foil capacitormatsua sawp233p3106ta2o5 phase diagram
|
PDF
|
