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    H01N60I Datasheets (1)

    Hi-Sincerity Mocroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    H01N60I
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 60.53KB 5

    H01N60I Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		mos200502h01n60200oc183oc+13217oc260oc245oc10secmosfet mark y2mosfet k 61 y1mosfet y1mosfet mark h1marking code k1marking y1h01n60imarking a1 transistorpb40 PDF

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		mos200502h01n60200oc183oc+9217oc260oc245och01n60ih01n60jmosfet mark y2mosfet mark h1tl 434mosfet sn60 PDF