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    H02N60 Search Results

    H02N60 Datasheets (10)

    Hi-Sincerity Mocroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    H02N60
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 75.93KB 6
    H02N60E
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 75.93KB 6
    H02N60F
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 75.93KB 6
    H02N60I
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 75.94KB 6
    H02N60J
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 75.93KB 6
    H02N60S
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 76.01KB 6
    H02N60SE
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 76KB 6
    H02N60SF
    		Hi-Sincerity Mocroelectronics N-channel High Voltage MOSFET Original PDF 76KB 6
    H02N60SI
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 76.01KB 6
    H02N60SJ
    		Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF 76.01KB 6

    H02N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		mos200403h02n60o-252200oc+14183oc217oc260oc245och02n60i02n60all transistor 2n602n602n60 transistorpb40 bridge2n60 applicationmosfet mark h1tl 434h02n60e PDF

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		mos200403h02n60o-252200oc+15183oc217oc260oc245och02n60i2n60 transistorall transistor 2n60transistor 2n6002n602n60mosfet mark y2y1 marking code transistor2n60 application2n60 mosfetmarking code diode 648 PDF

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Contextual Info: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original     		mos200504h02n60so-252200oc+15183oc217oc260oc245och02n60simosfet mark y2y1 marking code transistormarking code diode 648pb40 bridgemosfet k 61 y1mosfet sn60transistor mark code h1diode marking code a2 y22n60smarking code 749 PDF

    H02N65

    Abstract: H02N60E H02N60F h02n
    Contextual Info: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		mos200910h02n65o-220ab183oc+7217oc260oc245oc10sech02n60eh02n60fh02n PDF