MOSFET MARK y2
Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
|
Original
|
mos200501h01n60s200oc183oc+8217oc260oc245och01n60sih01n60sjmosfet mark y2mosfet mark h1mosfet y1
|
PDF
|
MOSFET MARK y2
Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor
|
Original
|
mos200501h01n60s183oc217oc+12260oc245oc10sech01n60simosfet mark y2transistor mark code t101n60y1 marking code transistormosfet mark h1marking code n60mosfet y1transistor mark code h1
|
PDF
|
MOSFET MARK y2
Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to
|
Original
|
mos200501h01n60s200oc183oc+13217oc260oc245oc10secmosfet mark y2mosfet mark h1marking code k1marking a1 transistormarking y1mosfet k 61 y1mosfet y1pb40h01n60si
|
PDF
|