H01N60 Search Results

H01N60 Datasheets (6)

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Hi-Sincerity Mocroelectronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
H01N60		Hi-Sincerity Mocroelectronics	N-Channel Power Field Effect Transistor	Original	PDF	60.53KB	5
H01N60I		Hi-Sincerity Mocroelectronics	N-Channel Power Field Effect Transistor	Original	PDF	60.53KB	5
H01N60J		Hi-Sincerity Mocroelectronics	N-Channel Power Field Effect Transistor	Original	PDF	60.53KB	5
H01N60S		Hi-Sincerity Mocroelectronics	N-Channel Power Field Effect Transistor	Original	PDF	60.58KB	5
H01N60SI		Hi-Sincerity Mocroelectronics	N-channel High Voltage MOSFET	Original	PDF	60.58KB	5
H01N60SJ		Hi-Sincerity Mocroelectronics	N-channel High Voltage MOSFET	Original	PDF	60.58KB	5

H01N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MOSFET MARK y2 Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	mos200501 h01n60s 200oc 183oc +8217oc 260oc 245oc h01n60si h01n60sj mosfet mark y2 mosfet mark h1 mosfet y1	PDF
MOSFET MARK y2 Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60 Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	mos200502 h01n60 200oc 183oc +13217oc 260oc 245oc 10sec mosfet mark y2 mosfet k 61 y1 mosfet y1 mosfet mark h1 marking code k1 marking y1 h01n60i marking a1 transistor pb40	PDF
MOSFET MARK y2 Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor	Original	mos200501 h01n60s 183oc 217oc +12260oc 245oc 10sec h01n60si mosfet mark y2 transistor mark code t1 01n60 y1 marking code transistor mosfet mark h1 marking code n60 mosfet y1 transistor mark code h1	PDF
MOSFET MARK y2 Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	mos200501 h01n60s 200oc 183oc +13217oc 260oc 245oc 10sec mosfet mark y2 mosfet mark h1 marking code k1 marking a1 transistor marking y1 mosfet k 61 y1 mosfet y1 pb40 h01n60si	PDF
MOSFET MARK y2 Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60 Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	mos200502 h01n60 200oc 183oc +9217oc 260oc 245oc h01n60i h01n60j mosfet mark y2 mosfet mark h1 tl 434 mosfet sn60	PDF