NE73433 Search Results

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

2SC2037

Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Contextual Info: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable

2SC1424

Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

OCI 531

Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION

NE88933

Abstract: ne85639 NFC46 NE57835 NE645 NE21935 NE64535 NE68033 NE68035 NE68039
Contextual Info: N E C / SbE CALIFORNIA D • t.427414 ODGEflMB Tbb HNECC RF and DC Specifications Low Noise Devices a lllfj |3^ 1* #1 f II itti ft* iltasfc-S SSmiJe iSÉ-asfcl | | i | | | I in a»iiSr# *W =BP*>8 AiS SiiSf*K f a ll * t i l l MAG ' CL Ic f SÈI««nW_e «gÿwfflHfea®»la V (mA) (GH/)

2SC1424

Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F

Contextual Info: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2SC1424

Abstract: 2SC4090 017 545 71 32 02 2SC2026
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF

uPA63

Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening

2SC2148

Abstract: NE73435 transistor "micro-x" "marking" 3 Micro-X Marking 865 2SC4185 NE734 NE73430 NE73430-T1 NE73433 S21E
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION

transistor IR 324 C

Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency

2SC1424

Abstract: s2l sot23
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF

23STYLE

Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION

NE68018

Abstract: 814T
Contextual Info: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89