MOTOROLA T 2N50 Search Results

SILICON DICE motorola

Contextual Info: MOTOROLA SC -CDIODES/OPTO} S.36 7 2 5 5 MOTOROLA 34 SC »F|b3t,7aSS □ □ 3 7 tì3a a D I O D E S /O P T O 34C SILICON POW ER TRANSISTOR DICE (continued) 37932 D T’ 33'0/ 2C5038 DIE NO. — NPN LINE SOURCE — PL500.786 & This die provides performance equal to or better than that of

transistor bd4202

Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

2N3950

Abstract: 2N5070 2N5071 MRF401
Contextual Info: MOTOROLA SC 34 {DIODES/OHTOJ 6367255 MOTOROLA SC D E ^ | t 3 t ? a S S ’ 0D3f i Df l 7 DIODES/OPTO 34C 38087 D 7 ^ 33 - SILICO N RF TR A N SISTO R DICE (continued) 7 "J- // MRFC401 DIE NO. — NPN LINE SOURCE — RF605.411 This die provides performance equal to or better than that of

2N6429

Abstract: J 2N2484 mpsa18 2N642B MPS-A09 2N2484 motorola 2N2483 SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09
Contextual Info: MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC ^ * . * 3' . 34 DE J t>3fc.725S 0037T7t. □ 34C DIODES/OPTO 37976 1 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C2484 DIE NO. — NPN LINE SOURCE — DMB102 This die provides performance similar to that of the following device types:

MJ480

Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
Contextual Info: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419

MMBA811C6

Abstract: MMBA812M5 fr5 transistor MMBA812M6 MMBC1622D6 25CC BSS79B BSS79C BSS82B BSS82C
Contextual Info: motorola sc 6367254 -c x s t r s / r f > MOTOROLA S C Tb DE 1 CXSTRS/R F M ax im u m r a t i n g s 96 D 8 1 9 6 9 Value VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc lc 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ro ja

BCX71K

Abstract: BCx71g
Contextual Info: MOTOROLA r SC 6367254 -CXSTRS/R DËlh3b72S4 DDñnSI F> 96D 8 1 9 5 9 XSTRS/R„F MOTOROLA SC i T'27-of MAXIM UM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Vc e O 45 V Collector-Base Voltage VCBO 45 V Emitter>Base Voltage V eb o 5.0 V lc

2N3303

Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Contextual Info: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­

2N3819 MOTOROLA

Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Contextual Info: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup­

SILICON SMALL-SIGNAL DICE

Abstract: SILICON SMALL-SIGNAL transistor DICE MM8006
Contextual Info: MOTOROLA SC - CDIODES/OPTOJ Ím DE Jfci3fci7555 6 3 6 7 2 5 5 MOTOROLA SC D IO D E S /O PT O 0030055 S 34C 3 8 0 5 5 T -df-X s SILICON RF TRANSISTOR DICE (continued) 2C5031 DIE NO. — NPN LINE SOURCE — RF502.191 This die provides performance equal to or better than that of

2N5051 MOTOROLA

Abstract: transistor sc 308 2N5050 2n3584 motorola 2n6495 2n4240 2n6422
Contextual Info: MOTOROLA î SC { D I O D E S / O P T O Ï 6367255 MOTOROLA ~Ïm SC DE I h 3 b 7 E S S □ 0 3 7 ^ a c] 5 § ~ D IODES/OPTO 34C 37929 SILICON POW ER TRANSISTOR DICE (continued) 2C4240 DIE NO. — NPN LINE SOURCE — PL500.308 NPN r - 3 3 ^ 2C6423 die no.

Contextual Info: MOTOROLA SC -CXSTRS/R 6 3 6 7 2 5 4 MOTOROLA SC ] > e | t j Bt i TES M F> 96D 6 1 9 4 5 CXSTRS/R F > Symbol Value U nit VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage Veb o 5.0 Vdc ic 100 mAdc Symbol Max U nit Pd 225 mW Rating Collector Current — Continuous

P2N50

Abstract: tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N50 M T P 2N 45 M T P 2N 50 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 2 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high

2N3866 MOTOROLA s parameters

Abstract: MPS3866A 2n3866A 2C3866 2N3866 2N3866 MOTOROLA
Contextual Info: MOTOROLA s c -CDIODES/OPTOÏ — 34 de |b3b7255 003ÔD51 î I 6 3 6 7 2 5 5 MOTOROLA SC ' - • 34c D I O D E S / O PTO> 3805 1 D v SILICON RF tRA N SISTO R DICE (continued T ~ 3 /- 2 3 2C3866 DIE NO. — NPN LINE SOURCE — RF502.151 This die provides performance equal to or better than that of

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

Contextual Info: 4bE D b3b?2S4 00^4050 2 • M 0 T b " P 3 l - l 5 MOTOROLA SEM ICONDUCTOR 2N5031 2N5032 TECHNICAL DATA XS TRS/R F The R F Line 2.5 dB 9 450 MHz - 2N5031 3.0 dB « 450 MHz - 2N5032 HIGH F R E Q U E N C Y T R A N S IS T O R S NPN S ILIC O N H IG H -F R E Q U E N C Y T R A N S IS T O R S

Motorola 2N50

Abstract: 2N50M Motorola t 2N50
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode Silicon G ate TM O S DPAK fo r Su rface M o u n t or Insertion M ount TM O S POWER FET 2 AMPERES rDS on = 4 OH M S

25CC

Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
Contextual Info: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd

417 TRANSISTOR

Abstract: 25CC 2N5086 MMBTA63 MMBTA64 MMBTA70 MMBTA92 MMBTA93 MPSA75 MPSA92
Contextual Info: M O T O R O L A SC Í X S T R S / R 6367254 Tb F> MOTOROLA SC DE I t 3 t ? a S 4 96D 8 2 0 6 1 CXSTRS/ R, F □DöfiOhJ. D t-bpi-ba M A X IM U M R A TIN G S Sym bol Value U n it VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage Ve b o 10

MCR203

Abstract: MCR205 2N5063 MCR120 2n5063 thyristor mcr202
Contextual Info: 1 DE • ta3ti7ESS 0a3fll53 5 M O T O R O L A SC { D I O D E S / O P T O Ï ;\ 6367255 MOTOROLA SC DIODES/OPTO 34C 38153 7 ^ 5- SILICON THYRISTOR DIE (continued) D // 2C5062 DIE NO. LINE SOURCE — DTL62 Device assembled from this die type are similar to the fol­

BCX71G

Abstract: BCX70J 2N5086 BCX70G BCX70H BCX70K BCX71J BCX71K MPS3904 sot23 ria marking
Contextual Info: 6367254 MOTOROLA SC 1 lb M O T O R O L A SC Í X S T R S / R F> XSTRS/R » E l t.3 b? as M F> 96D 8 1 9 5 7 M A X IM U M RA TING S Rating Collector-Em itter Voltage ^ Collector-Base Voltage * Emitter-Base Voltage Sym bol Value Unit VcEO 45 Vdc VCBO 45

2N5088

Abstract: 2N5088 MOTOrola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Tran sistors NPN Silicon BASE EMITTER M A X IM U M R A T IN G S Rating C o llector-E m itter Voltage Symbol 2N5088 2N5089 Unit VCEO 30 25 Vdc 35 30 vdc C o llecto r-B ase Vottage VC B O E m itte r-B a s e Voltage

Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 FÏ M OT O RO L A SC D E .| b 3 t i 7 E S M 0001=154 96D 8 1 9 5 4 D <XSTR,S/R F MAXIMUM RATINGS T 'Z l'O f — Sym bol Value Unit Collector-Emitter Voltage V cEO 45 Vdc Emitter-Base Voltage Vebo 5.0 Vdc >C 100 mAdc Sym bol

MPS4250A

Abstract: MPS6519 motorola MPS6522
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DIODES/OPTO D eT | b 3 b 7 2 5 S , /r 37998 T ~ 2- 7 SILICON SM ALL-SIG NAL TR A N SISTO R D'CE (continued) •"/ 7 2C5087 DIE NO. — PNP LINE SOURCE — DMB150 This die provides performance similar to that of the following device types: