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Contextual Info: MPS5138 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MPS8093
Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO
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gs0m33mps404mps404amps3638+7mps3638amps3702mps3703mps4248mps4249mps4250mps8093
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2SA1211
Abstract: A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 BCY18 KT209D ST8014
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 -60 -65 -70 75 -80 85 90 - 95 Y BR CEO hFE (V) V(BR)CEO 5 Manufacturer 2SA504 2N5448 BFT61 BFT61 TD2905 2N937 ST8700 KT214El BCY18 BCY18 2N3527 PN5138 2N5138 2N1255 BC351 BC351A BC351B
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2sa5042n5448bft61td2905+132n937st8700kt214elbcy182sa1211a5t4061a8t4061low-power silicon pnptp5372st8704st823kt209dst8014
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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MPS8093
Abstract: MPS6652 mps404
Contextual Info: SPRAGUE/SENICOND . Î GR OU P 8 5 14ÖT9 SPRAGUE. =13 D I ô513fl5Q 0 Q G 3 5 T 7 S E M I C O N D S / ICS fl • 93D 03597 J ' PLASTIC-CASE BIPOLAR TRANSISTORS T '3 7 '9 t > PNP Transistors ‘M P S’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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513fl5qmps404mps404amps3638+8mps3638amps3702mps3703mps4248mps4249mps4250mps8093mps6652
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mps4354c
Abstract: MPS8093C mps6518 MPS404C
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, D • G5DM33A 000357M b ■ ALGR SEMICONDS/ IC S 03574& ' 93D BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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g5dm33a000357mmps4354cmps8093c+2mps6518mps404c
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MPS4250A
Abstract: MPS6519 motorola MPS6522
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DIODES/OPTO D eT | b 3 b 7 2 5 S , /r 37998 T ~ 2- 7 SILICON SM ALL-SIG NAL TR A N SISTO R D'CE (continued) •"/ 7 2C5087 DIE NO. — PNP LINE SOURCE — DMB150 This die provides performance similar to that of the following device types:
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dmb1502c50872n50862n5087+9mmt71mps4248mps4249mps4250mps5138mps6518mps4250amps6519 motorolamps6522
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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