MG50M Search Results

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} 9097250 T O S H I B A <DISCRETE/OPTO> SEMICONDUCTOR ToJhtht D E | T 0 T 7 E S 0 0Dlti3SS 90D 16325 DT-33-35" -TOSHIBA G-TR MODULE MG50M1BK 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

lF-50A

Contextual Info: MG50M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Buit-in to 1 Package. . High DC Current Gain: hpE=100 Min. (Ic=50A)

MG50M2YK1

Abstract: 17250 b1 10
Contextual Info: TOSHIBA { D IS CR ET E/OPT O* _ TO 9 0 9 7 2 5 0 T O SH I BA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR cïDcT7ES0 D O l bD bb ñ 90D 16066 DT-\33«35I TOSHIBA GTR MODULE MG50M2YK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG50M1BK1

Abstract: MG50M1
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M1BK1 HIGH POWER SWITCHING APPLICATIONS, Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . High DC Current Gain : hyE=100 Min. (Ic=50A) . Low Saturation Voltage = VCE(sat)=2.5V(Max.)

MG50M2YK9

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=50A)

MG25M1BK1

Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
Contextual Info: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400

MG50M2CK2

Contextual Info: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)

MG50M1BK1

Abstract: MG50M1
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M1BK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . High DC Current Gain : hpE=100 Min. (Ic=50A) . Low Saturation Voltage : vCE(sat)=2-5v(Max-) (Ic=50A)

NPN VCE0 1000V

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d from Case. . 2 Power T r a n s i s t o r s and 2 F re e Wheeling Diodes a r e B u i t - i n to 1 Pac kage.

MG50M2YK9

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector :ls Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain

MG50M2CK1

Abstract: EGA-MG50M2CK1-1
Contextual Info: TOSHIBA GTR MODULE TOSHIBA SEMICONDUCTOR MG50M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECH N ICA L DATA HIGH POWER S W I T C H I N G APPLICATIONS. M O T O R CONT O R L APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

Contextual Info: DESCRIPTION GENDER 1-9 10-124 Gender Changers Shielded and Insulated to Guard Against RFI/EMi Emissi ns atajCabling 1 MODEL 25-99 l Handy devices enable the mating o f cables o f the same gender. This series is metal encas d for maximum shielding and insulated with molded vinyl.

MG200J2YS21

Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

T3D 54 DIODE

Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
Contextual Info: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single