MG150H Search Results

MG150H2CL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)

MG150H2YS1

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0us Max. trr=0.5us (Max.) Low Saturation Voltage : VcE(Sat)=5.0V(Max,ï Enhancement-Mode Includes a Complete Half Bridge in One

mg150h2yl1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpE= 80 Min. (Ic=150A) . Low Saturation Voltage

MG150H1FL1

Abstract: IQ1000 IC280 MG150H
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H1FL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic=150A) . Low Saturation Voltage

MG150H2DL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2DL1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=80 Min. (Ic=150A)

MG150H2YL1

Abstract: mcj-b
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in rarr. MOTOR CONTROL APPLICATIONS. . The Collector ls Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpE=80 Min. (Ic~150A) . Low Saturation Voltage

MG150H2YS1

Abstract: IGBT trr
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 H I GH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. High Input Impedince High Speed : tf=1.0ys Max. Low Saturation Voltage : V c e (sa t)=5 .OV(Max.) trr=0.5iis (Max.) Enhancement-Mode

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~TD 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR TECHNICAL DATA D Ê J 70772SO 001bS7M H 90D 16274 H G 1 5 0 H 1 Ï LI MG15 0H2CL1 M G 1 5 0 H 2 D L 1 hJ Eu H ffi o m h o £ O TOSHIBA CORPORATION G T I A2A DTr-33-‘35 TOSHIBA _

MG150H2YL1

Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
Contextual Info: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)

MG15G1AL3

Abstract: MG25M1BK1 MG50m1bk1 MG30G1BL3 MG50G1BL3 mg75g1bl1 MG200M1FK1 MG60M1AL1 MG30G1BL4 MG15H1AL1
Contextual Info: - 212 n p n . y - ' o Y - 7 l) - + - í ; U ' 5 f ' f ^ - * £ ¿ & R y - X « j & 't t t * á F f t T l, '. 6 ° iiá f t S d ít t i- ^ íá g i f ifi« ) > y 'J > h > * h 7 > y ^ ? l B U f fi^ íg K ft A L-1 r otu± h BK- 1 B L -I C c) x " r- 1 t B

30U6P42

Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Contextual Info: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

MG150H2YL1

Contextual Info: TOSHIBA {DISCRETE/OPTO! 9097250 TOSHIBA TO SH IB A IQ DISCRETE/OPTO> BE I TQT7ESQ 001ti034 b 90D SEMICONDUCTOR 16034 D7^3 3 - 3£ ~ TOSHIBA GÎR MODULE MG I 5 0 H 2 Y L 1 TECHNICAL DATA SILICON NPN TIRPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG150H2DL1

Abstract: MG100G2DL1 MG30G2DL1 MG100G2DL MG50G2DL1 MG75G2DL1 MG100H2DL2 2-98C2A 408 npn
Contextual Info: — 216 — N P N , h y f ’— ' l v y y f ë f â . 2 f f lf t 8 - h 7 ' s i / 7^ 9 2 flf iï* l o 9 ' ~ 'J y o 7 ’J — j M o a ô È t i9 » « 8 K S H f f lU B •9 ' * t — K f t d l -1 E l o iy ± C2 JL y + Y ? ( ^ s ^ t c T ) C l Y f Î

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

MG150H2YL1

Abstract: MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1
Contextual Info: -221 sg - 2 p V cc * * 9 & U a # l= 0 . 5 * 4 • y ^ > r ^ r i * E n « t y p . « 0 u z . T . tâ fo m Œ (V X 'f I c il + I B on ? • 3 V y 91ï ï y j t - V m & iK i u s) I B V BE V cE x i = 2 5°C ) I b; V cc R i , t . (V ) I F ( u s) % 1 p V be

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入