MG75G2DL1
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATU R E S : . The C o l l e c t o r is Isolated from Case. . 2 P o w e r T r a n sistors and Free Wheeling D i odes are B u i l t - i n to 1 Package.
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mg75g2dl1mg75g20l1 |
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MG75G2cl1 toshiba
Abstract: MG75G2CL1
Contextual Info: TOSHIBA {DISCRETE/OPTO} TO .DE | ^0^7550 DDlbE37 T 90D 16237 9097250 TOSHIBA DISCRETE/OPTO • SEMICONDUCTOR , MG75G1JL1 MG75G2CL1 MG75G2DL1 TECHNICAL DATA MG75G1JL1 Weight : 205g MG75G2CL1 El C3 MG75G2DL1 Height : 245g ST 1 A 2 A TOSHIBA CORPORATION - 243 -
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ddlbe37mg75g1jl1mg75g2cl1mg75g2dl1+2dt-33mg75g2cl1 toshiba
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MG30H1BL1
Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL
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2sd1314mg50g1bl3mg30g18l4mg15h1al1+13s3885mg30h1bl1mg100g1al3mg100g1fl1mg150h1fl1mg200h1fl1amp6502mg30g63l2mp6504mg50g2yl9a1015mg50g6el9mg150h2yl1
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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o220abo-126j2y transistort15j10+8mp4704mg100m2ck12sb834mp3103mg50j6es91mp3002mp45052sc497
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MG150H2DL1
Abstract: MG100G2DL1 MG30G2DL1 MG100G2DL MG50G2DL1 MG75G2DL1 MG100H2DL2 2-98C2A 408 npn
Contextual Info: — 216 — N P N , h y f ’— ' l v y y f ë f â . 2 f f lf t 8 - h 7 ' s i / 7^ 9 2 flf iï* l o 9 ' ~ 'J y o 7 ’J — j M o a ô È t i9 » « 8 K S H f f lU B •9 ' * t — K f t d l -1 E l o iy ± C2 JL y + Y ? ( ^ s ^ t c T ) C l Y f Î
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-25-cmg50g2dl1mg75g2dl1h-101+7mg150h2dl1mg100g2dl1mg30g2dl1mg100g2dlmg100h2dl22-98c2a408 npn
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mg15g1al3
Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673
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2sj1152sj1232sj1472sk357+162sk3582sk3852sk3862sk3872sk3882sk405mg15g1al3mg400h12sk11242sk7912sk525mp61012sk5312sk6742sk6732sk405 2sj115
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MG30H1BL1
Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX
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00-600v-1400vgt8n101gt8q101+16gt25h101pmg25h1bs1gt25ji01gt50g102mg50h1bs1gt50j101mg30h1bl1s3885mg100h2zs1mg100g2ys1mg100n2ys1mp6502mg150j2ys1mp6101mg25q6es1mg15j6es1
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