MG80S2YK1 Search Results

MG80S2YK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG80S2YK1 HIGH POWER SWITCHING APPLICATIONS. MO TOR CONTROL APPLICATIONS. . T h e C o l l e c t o r is I s o l a t e d f r o m Case. . P o w e r T r a n s i s t o r s and 2 F r e e W h e e l i n g Diodes are Built Into 1 Package.

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG80S2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hj?E=100 Min. (Ic~80A)

MG150H2YL1

Abstract: MG100H2CK1 MG200H2CK1 MG100H2CL1 MG100Q2YK1 MG100G2CL1 MG150G2YL1 MG100G2YL1 MG80S2YK1 MG75M2CK1
Contextual Info: - 220 ÍN P N . 2 Ê ^ lt f ^ SI B l E li ¿B2 B. V c BO V CE X SUS) -k V EBO (T . 'Ê. c CP B F ( lu s ) (V ) (V ) E 1/C 2 B2 E2¿ (V ) (A ) (A ) (A ) (A ) py Pc = 2 5 °C ) T , T ., (la s ) (a n (A ) (W ) C C ). (°C ) V „ , Te % CBO (m A ) Ci£2)

30U6P42

Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Contextual Info: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which

MG25M1BK1

Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
Contextual Info: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

MG150H2YL1

Abstract: MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1
Contextual Info: -221 sg - 2 p V cc * * 9 & U a # l= 0 . 5 * 4 • y ^ > r ^ r i * E n « t y p . « 0 u z . T . tâ fo m Œ (V X 'f I c il + I B on ? • 3 V y 91ï ï y j t - V m & iK i u s) I B V BE V cE x i = 2 5°C ) I b; V cc R i , t . (V ) I F ( u s) % 1 p V be