MG100J1ZS40 Search Results

Contextual Info: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)

Contextual Info: MG100J1ZS40 TOSHIBA MG100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage

4A05 diode

Abstract: diode 4a05 Toshiba V300 ZS40 igbt toshiba mg MG100J1ZS40 V300 4a05 100/diode 4a05
Contextual Info: MG100J1ZS40 TOSHIBA MG 1 0 0 J 1 Z S 4 0 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage

MG100J1ZS40

Contextual Info: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications l High input impedance l High spee : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE (sat) = 3.5V (max)

diode 083

Abstract: MG100J1ZS40
Contextual Info: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High spee : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE (sat) = 3.5V (max)

Contextual Info: MG100J1ZS40 TOSHIBA TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT 1 0 0 J 1 Z S 40 M G Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.)

MG100J1ZS40

Contextual Info: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High spee : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max)

Contextual Info: MG100J1ZS40 HIGH POW ER SW ITCHIN G APPLICATIONS. M O T O R CON TROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.35/is Max. trr = 0.15//s(M ax.) Low Saturation Voltage : v C E (sat) =3.5V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.

Contextual Info: MG100J1ZS40 TOSHIBA TOSHIBA GTR MODULE M G SILICON N CHANNEL IGBT 1 QQJ1 ZS4 Q Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35,i/s Max. trr = 0.15ju& (Max.) • Low Saturation Voltage

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬