L3 SOT23 Search Results

SY68730ZC

Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
Contextual Info: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18

sy10s897jc

Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
Contextual Info: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2

BSS70

Abstract: BSS70R bss69r BSS69 DSA003680
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40

Contextual Info: BSS69 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS R Q Q 7 ÌÌ ISSU E 2 - SEPTEM BER 1995 Q PARTMARKING DETAILS — BSS69 BSS70 BSS69RBSS70R- L2 L3 L6 L7 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V V CBO

BCR119L3

Abstract: BCR119 BCR119F BCR119S BCR119T BCR119W
Contextual Info: BCR119./SEMH7 NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR119/F/L3

TFK 03 diodes

Abstract: tfk 605 TFK diodes tfk smd TFK 03 47 TFK 03 catalog telefunken TFK 03 160 2Z SOT23 TFK Label
Contextual Info: T e m ic TELEFUNKEN Semiconductors Tape and Reel Standards TEMIC offers T-l 3 mm and T-l3/4 (5 mm) LEDs pack­ aged on tape. The following specification is based on IEC publication 286, taking into account the industrial re­ quirements for automatic insertion.

Si2303BDS

Abstract: Si2303BDS-T1
Contextual Info: Si2303BDS Vishay Siliconix P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.200 at VGS = –10 V –1.64 0.380 at VGS = –4.5 V –1.0 VDS (V) –30 30 * TO-236 (SOT-23) G 1 S 2 3 D Top View Si2303BDS (L3)* *Marking Code Ordering Information:

BCR166

Abstract: BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts
Contextual Info: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2

L3 SOT23

Abstract: e1 3040
Contextual Info: L3 SOT-23 Package 3-Pin D e1 S C e L E H B A C L A1 SYMBOL A A1 B C D E e e1 H L S MIN MAX 0.890 1.120 0.013 0.100 0.370 0.510 0.085 0.180 2.800 3.040 1.200 1.400 0.890 1.030 1.780 2.050 2.100 2.640 0.55 REF 0.450 0.600 NOTE: ALL MEASUREMENTS ARE IN MILLIMETERS.

HB-1M1608-121

Abstract: LU1T516-43 NM7010B Ceratech 120R 1SS181 2X14 RTL8201BL W3150A CONNECTOR-RJ45
Contextual Info: BD REV : 1.2 NM7010B No. COUNT LOCATION 1 CP1 1 2 1 CP2 3 1 CP3 C1,C5,C6,C7,C9,C10,C11,C13 ,C14,C15,C16,C17,C18,C19, 4 17 C20,C21,C22 5 2 C8,C12 6 1 D1 7 2 JP2,JP1 8 2 L2,L1 9 1 L3 10 1 R1 11 1 R2 12 2 R4,R3 13 4 R5,R6,R7,R8 14 1 R9 15 2 R10,R11 16 2 R12,R13

100v capacitor 10k ti

Abstract: optocoupler 357 0.1uF Capacitor Ceramic rectifier diode 2kv zener 6.3V CTR CAPACITOR 0.1uf MOSFET N-CH 200V 357 optocoupler bridge rectifier 1A DF01S 1A 100V
Contextual Info: POE Power Supply BOM Texas Instruments PMP511 Rev B Qty 1 1 1 1 3 2 1 1 3 1 2 1 2 2 1 1 1 1 1 1 1 2 1 1 1 1 1 1 1 1 1 1 3 1 1 1 1 1 1 RefDes C16 C19 C18 C21 C17, C20, C22 C15, C23 C7 C13 C8, C9, C10 C14 C11, C12 C5 D5, D8 D6, D7 D3 L1 L3 R12 R7 R6 R13 R9, R17

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

Contextual Info: RF2377 PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER Package: SOT23-6 Features ̈ ̈ ̈ ̈ ̈ 50dB Linear Gain Control Range 24dB Maximum Gain Single 2.7V to 3.3V Supply 45mA Supply Current High Linearity RF OUT 1 GND 2 GC 3 Applications ̈

BFR93 application note

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS

SOT23 W1P NXP

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

MBB262

Abstract: MBB255 MCD089
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure

BFR91A

Abstract: S parameters of BFR93AR GHz transistor BFR93AR BFT93 IMD2 transistor
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure

USBLC6-2

Abstract: UL26 USBLC6-2P6 marking illustrations
Contextual Info: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.

Contextual Info: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and

W1p TRANSISTOR

Abstract: transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06
Contextual Info: P hilips S em iconductors l i 7 1 1 0 f l2 b 0 0 ^^354 3 SÖ H IP H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. DESCRIPTION PIN It is primarily intended or use In RF wideband amplifiers, such as in

TAG 8907

Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
Contextual Info: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in

433MHz saw Based Transmitter Schematic

Abstract: IQXO-350C SAW resonator 433MHz AN1201 philips 433mhz receiver 433MHZ amplifier schematic BC808 BFQ67 SA7016 XE1201
Contextual Info: _ AN1201.04 Application Note _ The XE1201 for Channelized applications based on an external PLL Author: Gaël Coron For further information, please contact: XEMICS SA E-mail:info@xemics.com Web: http://www.xemics.com/