SY10S897 Search Results

SY68730ZC

Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
Contextual Info: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18

G770

Abstract: G600 sy10s897 SY10S897JZ amkor PLCC28 PLCC-28 0815 Unisem PLCC-44
Contextual Info: PLCC Lead Free Package Rel Data High Temperature Storage Life +150 deg C, 1000 hours Device Lot No Pkg Assembly MSL Soak Peak Temp Plating Date Code SS # Reject Dev. Hrs. Location SY100E111LEJY 5A39598M60 SY100E111AEJI 5A39598M20 PLCC-28 PLCC-28 HTSL.L2 HTSL.L2

Contextual Info: ASSET 1.2 micron Bipolar Process OPERATING LIFE @ Tj = + 130-150c at rated Voltage Vcc Qty Act Hrs Rej Act Hrs Rej Act Hrs Rej Act Hrs Rej Total Dev.Hrs Test Notes 4A02086M01 SOIC-28 5.25 V 116 168 500 1000 2000 1 231000 * B352MEB SOIC-28 5.25 V 116 168 3000

sy10s897jc

Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
Contextual Info: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2

B1340

Abstract: sy10s897 TSMC 0.18 um CMOS 2A243 bcd3 cmos tsmc 0.18 TSMC 0.25Um MIC29203BU Unisem B816E
Contextual Info: Q1-2004-MICREL- PKG STORAGE LIFE TEST BAKE TA = + 150C Package Family PKG Type Lds Device WM W-SOIC W-SOIC W-SOIC WSOIC WSOIC WSOIC WSOIC WSOIC WSOIC WSOIC WSOIC 16 16 16 20 28 28 28 28 28 28 28 MIC2027 MIC2527 MIC2527 MIC2177 MIC1700B SY69952ZC SY69952ZC