KM6165 Search Results

Contextual Info: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.)

Contextual Info: CMOS SRAM KM616513 32,768 WORD x 16 BIT High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 5 ,1 7 ,2 0 ,25ns max. • Low Power Dissipation Standby (TTL) : 50 mA (max.) (CMOS): 1mA (max.) Operating KM616513-15 :210mA (max.) KM616513-17 : 200mA (max.)

Contextual Info: PRELIMINARY KM616513 CMOS SRAM 32,768 WORD x 16 BIT High-Speed CMOS Static HAM FEATURES GENERAL DESCRIPTION • F:ast Access Time 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max.) Operating KM616513J-17: 180mA (max.)

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

km6165

Contextual Info: KM6165A/KM6165AL CMOS SRAM 64K x 1 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 25,35,45 ns max. • Low Power Dissipation Standby (TTL) : 3mA (max.) (CMOS): 2mA (max.) 1CHVA (max.) L-Version Operating : 100mA (max.) • Single 5V ± 1 0 % Power Supply

Contextual Info: KM616513 CMOS SRAM 32,768 WORD x 16 BIT High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 5 ,1 7 ,2 0 ,25ns max. • Low Power Dissipation Standby (TTL) : 50mA (max.) (C M O S ): 1mA (max.) Operating KM616513-15 :210m A (max.)

Contextual Info: SAMSUNG ELECTRONICS INC b 7 E D • 7 ^ 4 1 4 2 G O lT b E M KM616513 2 5 1 SM6K CMOS SRAM 32,768 WORD x 16 BIT FEATURES GENERAL DESCRIPTION • F a s t A cc e s s T im e 15, 17, 20, 25ns m ax. • Low P o w er D is sip a tio n S tandb y (TTL) : 5 0m A (m ax.)

L0533

Abstract: KM616513 KM616513J-20 KM616513J20
Contextual Info: KM616513 CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1mA(max.) Operating KM6165135-15: 210mA KM616513J-17: 200mA KM616513J-20: 190mA KM616513J-25: 180mA

MB81C71-55

Abstract: LH5161-25 MCM6287-35 mcm6287 KHB165L-35 KM6165-45 KM6165L-25 KME165-35 M5M5187AP-25 MB81C71
Contextual Info: - 66 - 4 K X m £ ît * CC TAAC max ns) TCAC (ns) TOE max (ns) CMOS y A f- > TOH rain (ns) TOD max (ns) S t a t i c ;/ TWP min (ns) RAM ( 6 5 5 3 6 x 1 ) tt n < TDS min (ns) TDH (ns) TWD nin (ns) TWF max (ns) V D D or V C C (V) 22PIN 1DD max <mA) 6287 À

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs