65536X1 Search Results
65536X1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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16PIN
Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
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65536x116pin51cb4h-1051c64h-12+13 | |
29F100T
Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
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mx29f100t/b128kx8/64kx16131072x8/65536x16+10 | |
CY7C1298A
Abstract: GVT7164C18
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cy7c1298a/gvt7164c18cy7c1298a/gvt7164c1865536x18+2 | |
MX29F100TContextual Info: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+7 | |
29F100TContextual Info: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
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Contextual Info: G E C P L E S S E Y ma9287 S L M I C O N L l i C T O R S Radiation Hard 65536x1 Bit Static RAM Preliminary Data) S 1 0 3 0 3 P D S Issu e 2.3 O c t o b e r 1990 Features • 1.5pm CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 106 rad (Si) |
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ma928765536x1ma9287_ | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
CY7C1298A
Abstract: GVT7164C18
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cy7c1298a/gvt7164c18cy7c1298a/gvt7164c1865536x18+2 | |
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Contextual Info: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si) |
OCR Scan |
ma918765536x1s10309pdscobalt-60 | |
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Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz |
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mx29f100t/b128kx8/64kx16131072x8/65536x16+6 | |
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
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mh1ss1tesla mh 7400mh 7404mh 7400 tesla+6 | |
marking A00
Abstract: GVT7164D18
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gvt7164d1865536x187164d18access/10ns+4 | |
IrLPBaud16
Abstract: UART DESIGN 16C550 5964-0245E
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pl0100139birlpbaud16uart design+2 | |
PIC16F816
Abstract: PIC16F86 pic16f877a full instruction set program for pic16c54c digital clock RFID pic16f876 PIC16F73 Bootloader 4mhz crystal to pic16f877 PCM16XC0 FUNCTION circuit pic16f874 pic16f84a
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pic12cxxx400nspic12c508a512x12+14 | |
HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
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hm6287hl-35hm62256bl-10hm628128al-5hm6264al-15+6 | |
rca thyristor manual
Abstract: HN623258 101490
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rca thyristor manualhn623258101490 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
64 bit booth multiplier
Abstract: block diagram 8 bit booth multiplier 2114 ram loader booth multiplier RLF100-11/12/Modified Booth Multipliers
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ac21864 bit booth multiplierblock diagram 8 bit booth multiplier2114 ram+3 | |
Halbleiterbauelemente DDR
Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
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r-1035halbleiterbauelemente ddrtransistor vergleichslisteu82720+7 | |
pic*16f73 bootloader rf transceiver
Abstract: TC9400 fsk 24cxx usb programmer 3 phase pwm pic16f877 mcp68 DC MOTOR SPEED position CONtrol pwm pic16F877 3 switch PIC16f877a based door security system 13.56Mhz class e power amplifier RFID phase pwm pic16f877 RFID pic16f73
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ds00148g2pic*16f73 bootloader rf transceivertc9400 fsk24cxx usb programmer+7 | |