J 350 FET Search Results

2s901

Contextual Info: fetizu <zSE.ml-Condu.etoi Lpiodueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GSTU8030 GSTU8035 GSTU8040 NPN 300, 350, 400V 8 AMP SWITCHING t( — 280ns TYPICAL TO-204AA (TO j)J • High Speed

MMBT6520

Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit C o llector-E m itter Voltage v CEO - 350 Vdc C ollector-Base Voltage v CBO - 350 Vdc Em itter-Base Voltage v EBO - 5 .0 Vdc -250 mA !C - 500 m Adc Symbol Max Unit pd 225 mW 1.8 m W .'C R* j a 556 xw pd 300 mW 2.4 m W '"C

Contextual Info: MWT-0618S-12P2/06182-12P2 i .m ì j itniitfhr irnsii* www.mwtinc.com Email; info@-m.wtinc.com TYPICA L SPECIFICATIONS AT 25 °C • 27.5 dBm P-MB gl • 4,6 IB SMALL SIGNAL GAIN • 15.0 dB INPUT/OUTPUT RETURN LOSS • 350 fflA @ +BY • USES TWO MwT-12HP GaAs FET DEVICES

Contextual Info: MWT-0618S-12P1/06182-12P1 i .m ì j itniitfhr irnsii* www.mwtinc.com Email; info@-m.wtinc.com TYPICA L SPECIFICATIONS AT 25 °C • 27.0 dBm P-ldB • 4,0 IB SMALL SIGNAL GAIN • 15.0 dB INPUT/OUTPUT RETURN LOSS • • 350 fflA @ +8V • USES TWO MwT-12HP GaAs FET DEVICES

74HC308

Abstract: s125
Contextual Info: MOTOROLA SC b3b72S2 OO^lbaa 350 blE D LOGIC IM0T4 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MC54/74HC30 8 -In p u t NAIMD G ate J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate CMOS The MC54/74HC30 is identical in pinout to the LS30. The device inputs are com­

2N5484

Contextual Info: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current

Contextual Info: Symbol Value Unit Collector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 40 Vdc Em itter-Base Voltage Vebo 4.0 Vdc Rating ic 50 m Adc PD 350 2.8 mW m W ,5C TJ- Tstg - 5 5 to +135 3C Symbol Max Unit R&j a 357 CC:W Collector C urrent — C ontinuous

Contextual Info: MPSH81* CASE 29-04, STYLE 2 TO-92 TO-226AA MAXIMUM RATINGS ¡Symbol Value Unit Co llecto r-Em itter Voltage Rating VcEO -2 0 Vdc C o llecto r-Base Voltage VCBO -20 Vdc Em itter-Base Voltage v EBO - 3 .0 Vdc ,PD 350 2.81 mW m W *C T j- ^stg - 5 5 to +150

MPSH07

Abstract: M200MH MPS-H07
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | 131,725. OOâtlSS 1 | M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 30 Vdc Coliector*Base Voltage VCBO 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Pd 350 2.81 mW mW/°C T j. TS g - 5 5 to +150 Symbol Max U nit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching BS107 BS107A N -Channel — Enhancement 1 DRAIN G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating Symbol Value Unit V DS 2 00 Vdc VGS V GSM ± 20 ± 30 Vdc Vpk 'd 'D M 250 500 PD 350 mW ^J. Ts tg - 5 5 to 150

J305

Abstract: J304 SJ304 JFET HIGH FREQUENCY
Contextual Info: J304 J305 CASE 29-04, STYLE 5 TO-92 TO-226AA 1 D ra in MAXIMUM RATINGS Symbol Value Unit Drain-Gate Voltage Rating Vd G -3 0 Vdc Gate-Source Voltage vgs -3 0 Vdc 'G 10 mA Pd 350 2.8 mW mW/°C Tl 300 °C T j- Tstg - 65 to +150 °C Gate C urrent Total Device D issipation

AX357

Contextual Info: Sym bol Value Unit Collector-Emitter Voltage v CEO 15 Vdc Coliector-Base Voltage V cB O 20 Vdc Emitter-Base Voltage v EBO 3.0 Vdc Pd 350 2.81 mW m W /T TJ ' Tstg - 55 to -t-150 °C Sym bol M ax Unit R« j a 357 °CW Rating Total Device Dissip ation id T a = 25°C

Contextual Info: Symbol Value Unit Collector-Em itter V oltage Rating v CEO - 20 V dc C ollector-Base V oltage v CBO - 20 V dc Vebo -3 .0 V dc PD 350 2.81 mW mW/°C T J. T stg - 55 to + 1 5 0 °C Symbol Max Unit 357 °C/W Em itter-Base V oltage Total Device D issip ation <v T/\ = 25°C

MP2004C

Abstract: MP2004CG
Contextual Info: MICRO POWER SYSTEMS INC □! M I>E~| t,m7 MM4 ODDS^SB 7 ^ p ow er T - 7 ^ '2 5 3 5 0 M H z F E T B u ffe r SYSTEMS MP2004/2004C FEATURES SIMPLIFIED SCHEMATIC • Slew Rate — 2500 V / / j s • Rise Time — 1 ns • • • • • • Bandwidth — 350 MHz

Contextual Info: MAXIMUM RATINGS Symbol Value U n it D ra in -G a te V o lta g e V DG -3 5 Vdc G a te -S o u rc e V o lta g e V GS -3 5 Vdc 'G 50 mA PD 350 2.8 mW m W :5C Tl 300 ’C T j . Tgtg - 65 to + 1 5 0 3C R a tin g G ate C u rre n t T o ta l D e vice D is s ip a tio n

EL2004G/883B

Abstract: el2m EL2004CG EL2004G EL2004L fet amplifier schematic MDP0002
Contextual Info: ELANTEC 2AE D INC HIGHPEBfOHMANCEAMAUiGISTEBRWEDCIHCUlTS a i a ^ S S ? OOOQTMtj 7 EL2004/EL2004C - 350 MHZ FET BllffCV ~ T ~ ~' ^ *7 3 5 ~ F eatu res G eneral D escrip tion • • • • • • • The EL2004 is a very high-speed, F E T input buffer/line driver

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163

EL200

Abstract: EL2004
Contextual Info: la n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2004/EL2004C 350 MHz FET Buffer F eatu res G eneral D escrip tion • • • • • • • T he EL2004 is a very high-speed, F E T in p u t b u ffer/lin e driver designed for u n ity gain applications a t b o th h igh cu rren t up to

1RF330

Contextual Info: MOTOROLA SC X S T R S /R IME F D I t3fci72SM OGä^fc,?! 4 | 7-3Ÿ-I/ MOTOROLA • I SEM IC O N D U C T O R TECHNICAL DATA IRF330 IRF331 IRF333 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silico n Gate T M O S These T M O S Power FETs are designed for high

IRF730

Abstract: IRF732 mtm5n35 GR 733
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF730 IRF731 IRF732 IRF733 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T h e se T M O S P o w e r FETs are d es igne d fo r high v o lta g e , high speed p o w e r sw itch in g ap p lication s

Contextual Info: HGH PERFORMANCEanalog integrated circuits EL2004/EL2004C 350 MHz FET Buffer F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • The EL2004 is a very high-speed, F E T input buffer/line driver designed for unity gain applications a t both high current up to

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

TL08 015

Abstract: C14A 2SK277 2SK278 T108 T460
Contextual Info: NEC Aj i ï T / \ f smm&wjgk '<*7— b mo M O S Field Effect Pow er Transistor z 2SK277,278 f e t x i f f l N-channel Power MOS FET High Speed Switching Industrial Use ^ ^ 0 / PACKAGE DIMENSIONS 2SK277,278Ü, S itE E w N * + * / i;IK ^ 'f'7 - M O S FET t*. f é *

2SK259

Abstract: 2SK260 HITACHI 2SK* TO-3 t7y25
Contextual Info: blE D MM'JbHQS 0013Ü22 bT? • H I T M HITACHI/ OPTOELE CTR ONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed Switching. • High Cutoff Frequency. • High Breakdown Voltage. • Suitable for Switching Regulator, DC-DC Con­