2SK259 Search Results

k2599

Abstract: 2SK2599
Contextual Info: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance

2SK2590

Abstract: 2SK1957 Hitachi DSA00116
Contextual Info: 2SK2590 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features D 2 • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter, Motor Control

Contextual Info: 2SK2590 Silicon N-Channel MOS FET HITACHI Preliminary Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control

Transistor D 2599

Contextual Info: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)

Contextual Info: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

Hitachi DSA001651

Contextual Info: 2SK2591 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO

2SK2598

Contextual Info: T O S H IB A 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

2SK2593

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03

2sk2596

Abstract: Hitachi DSA00307
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.

2SK2596

Abstract: pd4555
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI 1st. Edition Features • High power output, High gain. High efficiency PG = 12.2dB, Pout = 30.2dBm , -qD = 45 %min. f = 836.5M H z • Compact package capable o f surface mounting Outline UPAK

2SK2596

Abstract: 2SK2596BXTL-E
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting

2SK2598

Contextual Info: TOSHIBA 2SK2598 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2598 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •

2sk2599

Contextual Info: TO SH IB A 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance

Contextual Info: 2SK2590 Silicon N Channel MOS FET REJ03G1021-0300 Previous: ADE-208-1365A Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control

NEC MOSFET PUSHPULL

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)

2SK2599

Contextual Info: TOSHIBA 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2

NEC 9001

Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)

Contextual Info: 2SK2593 Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 1.6±0.15 ● High gate-drain voltage VGDO ● Downsizing 0.4 +0.1 0.2 -0.05 0.8±0.1 1 3 0.5 noise, high gain 1.0±0.1

Hitachi DSA0076

Abstract: 2SK2595
Contextual Info: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1366 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting

Hitachi DSA001652

Contextual Info: 2SK2590 Silicon N-Channel MOS FET Preliminary Nov. 1, 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control

2SK2598

Contextual Info: 2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2598 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.)

2SK2593J

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05 2 0.27±0.02 0 to 0.02 (0.50)(0.50) (0.80)

k2599

Abstract: 2SK2599 K259
Contextual Info: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance