1RF330 Search Results

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

AN-949B

Contextual Info: APPLICATION NOTE 949B Current Ratings, Safe Operating Area, and High Frequency Switching Performance of Power HEXFETl B y S. C L E M E N T E , B.R. P E LLY , R. R U T T O N S H A Summary This application note discusses the current handling capability, safe op­

irf244

Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
Contextual Info: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRF224

Abstract: IRF154 N IRF034 IRF035 IRF123 IBF220
Contextual Info: - 250 - T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E

irf113

Abstract: 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Ig s s Pd Id * /CH Vd g a t§ <Ta=25^C V g s th) Id s s rain * /CH Id nA) & F os(on) Vd s = Vg s max ft & Id (on) Ciss g fs Coss ft Crss Vg s =0 (max) *typ V g s (0) (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ)

MTP565

Abstract: application circuits of IRF330 AN-936A
Contextual Info: APPLICATION NOTE 936A The Do’s and Don’ts of Using Power HEXFETs By B R IA N R. PE LLY Summary In common with all power semi­ conductor devices, power M O S F E T s have their own technical subtleties, which must be properly understood if the designer is to get the most out of

Contextual Info: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*

1RF330

Contextual Info: MOTOROLA SC X S T R S /R IME F D I t3fci72SM OGä^fc,?! 4 | 7-3Ÿ-I/ MOTOROLA • I SEM IC O N D U C T O R TECHNICAL DATA IRF330 IRF331 IRF333 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silico n Gate T M O S These T M O S Power FETs are designed for high

IRF330

Contextual Info: 7964142 - í « S ^ M S U N G S E M IC O N D U C T O R D E I TTtiMms D D D S i m IN C 9 8 D 0 5114 7 “ D 7 ^ 3 7 -// N-CHANNEL POWER MOSFETS IRF330/331Z332/333 FEATURES • • • • • • • • Low RDS on Improved inductive ruggedness Fast switching times