IS42SM Search Results

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

SM32200K

Abstract: IS42SM32200K
Contextual Info: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42SM16800F-75BLI

Abstract: IS42SM16800F
Contextual Info: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are

IS42SM16800E-6BLI

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

16MX32

Abstract: IS42RM32160C
Contextual Info: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full

IS42SM16400K

Contextual Info: I S42SM/ RM/ VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/ VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: I S42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42S16160B(D)-7TL

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42RM32800D

Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 •฀ Fully synchronous; all signals referenced to a positive clock edge •฀ Internal bank for hiding row access and precharge

IS42SM16400G

Abstract: 42SM16400G IS42SM16400G-75BLI
Contextual Info: IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42SM16800F

Abstract: 42SM16800F IS42SM16800F-75BLI
Contextual Info: IS42SM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42SM32200K

Contextual Info: IS42SM/RM/VM32200K Preliminary Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42SM32400E

Abstract: ACT1010 IS42SM81600E-7TLI MO-207 IS42SM16800E IS42RM81600E IS42SM16800E-6TLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42RM32800D

Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information JUNE 2008 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

SM16200C

Contextual Info: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

is42sm32160c-75bl

Abstract: IS42SM32160C-7BL IS42RM32160C
Contextual Info: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full

IS42SM32200G

Abstract: 42SM32200G
Contextual Info: IS42SM32200G 512K x 32Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42SM16800F

Contextual Info: IS42SM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are

IS42SM32400F

Contextual Info: IS42SM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are

SM83200D

Abstract: IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM83200D IS42SM32800D IS42SM16160D-7BLI M3100
Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42SM32200K

Contextual Info: IS42SM/RM/VM32200K Advanced Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42RM32800D

Abstract: TSOP II 54 IS42SM32800d IS42SM83200D
Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Preliminary Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42SM16200C

Abstract: IS42SM
Contextual Info: IS42SM16200C IS42RM16200C IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32100C

Abstract: IS42RM32100C-75BLI IS42SM32100C
Contextual Info: IS42SM32100C IS42RM32100C IS42VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs