IC 2905A Search Results

2N 3495

Abstract: 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PINT TRANSISTOR TO-5/TO205AD/TO-39 PACKAG E D E V IC E T Y PE VcEO sus VOLTS Ic (m ax) AM PS TO -5 T O 205A D 2N 1132A 40 0.6 2N 2800 35 2N 2904 i T O -39 fn ^FE @ V V CE m in/m ax @ m A /V VcE(sat) @ I c/I b V @ m A /m A

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

1N916

Abstract: NFP2905 NFP2905A NFP290S
Contextual Info: NFP2905 NFP2905A A M PL IFIE R T R A N S IS T O R S P N P S IL IC O N PNP SMALL SIGNAL TRANSISTOR- DUAL M E C H A N IC A L O U T L IN E • • • • H IG H D C C U R R E N T G A IN H IG H C U R R E N T G A IN B A N D W ID T H P R O D U C T H IG H S P E E D S W IT C H IN G C IR C U IT S

TRANSISTOR TO-106

Abstract: transistor 2222a to-92 Transistors 2N 2N 2905a pnp transistor
Contextual Info: 33E D METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • 53fl33=ï4 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO Volts Device min VCBO VEBO Volts Volts min min hFE at bias IC VCE ICM PTA PTC mA Volts mA mW W A<A max max 1.2 0.010 min/max max max ICBO VCE sat

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

BEL100N

Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
Contextual Info: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

2905a

Abstract: ic 2905a 2904a 2906A 2907A A1290 2N2904A 2n 2905a
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP ai2907‘ G E N E R A L PURPOSE A M P LIF IE R S A N D SWITCHES The 2N 2904A, 2N 290EÎA, 2N 2906A and 2N 2907A are silicon planar epitaxial PNP tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec TO -18 (for 2N 2906A

2905a

Abstract: ic 2905a 2904a 2907A 2907 a12907 2N2907A 2808a 2904 2906A
Contextual Info: 2N 2904A 2N 2905A 2N 2906A SILICON PLANAR PNP a' 2” 7* GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904A, 2N 2905A, 2N 2906A and 2N 2907A are silicon planar epitaxial PN P tran­ sistors in Jedec T O - 39 for 2N 2904A and 2N 2905A and in Jedec T O -18 (for 2N 2906A

2933a

Abstract: smd marking mp 2905a PC2933AT-E1 smd diode marking mp capacitor Electrolytic MP 2905AHF ic 2905a UPC2933AHB 2905AT
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2933A, 2905A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION The µPC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The µPC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically

smd transistor marking NO2

Abstract: PC2933A 2933a transistor AY PNP smd MP-45G 2905a ic 2905a
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2933A, 2905A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION The μ PC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The μ PC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically

Contextual Info: Preliminary Data Sheet PC2933A, 2905A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR R03DS0029EJ0400 Rev.4.00 Mar 16, 2011 Description The μPC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The μPC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically

Contextual Info: Preliminary Data Sheet µPC2933A, 2905A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR R03DS0029EJ0400 Rev.4.00 Mar 16, 2011 Description The µPC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The µPC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically

smd transistor marking NO2

Contextual Info: Preliminary Data Sheet PC2933A, 2905A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR R03DS0029EJ0400 Rev.4.00 Mar 16, 2011 Description The μPC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The μPC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A