HY611 Search Results

HY6116-10

Abstract: HY6116 HY6116-12 HY6116-15 Hyundai Semiconductor
Contextual Info: HYUNDAI ELECTRONICS A3 dË| 4675088 HYUNDAI ELEC TR ON IC S MbTSOSÖ 0000003 E 83D 00083 ^ 4 6 -2 3 -1 2 jy rs i» « ' A ti t iR « L S jg g iy FEBRUARY 1986 FEATURES DESCRIPTION The HY6116 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

Contextual Info: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­ pled with innovative circuit design techniques,

HY6116ALP 10

Abstract: HY6116ALP HY6116A HY6116AP HY6116
Contextual Info: •HYUNDAI HY6116A Series SEMICONDUCTOR 2 K x 8-bit c m o s s r a m DESCRIPTION The HY6116A is a high-speed, low power 2,048 x 8-bits CMOS static RAM fabricated using high performance CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

HY6116ALP 10

Abstract: hyundai HY6116ALP
Contextual Info: HY6116A Series »HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6116A-10

Abstract: HY6116A
Contextual Info: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­

HY6110

Abstract: 400 high voltage switch model laser power Laser Diode 10 pin Laser Diode Driver
Contextual Info: HY6110 Laser Diode Driver High Speed Laser Diode Driver TEC Controllers Features ✦ ✦ ✦ ✦ ✦ ✦ Single ended ECL input 50Ω Data rates to 622 Mbps Adjustable modulation current Patented “backmatching” thermal management Backmatched output allows remote drive

HY6116ALP

Abstract: HY6116ALP 10 HY6116AP HY6116A hy6116 cmos series
Contextual Info: HY6116A S e rie s «HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6116A-10

Abstract: HY6116A
Contextual Info: •HYUNDAI HY6116A SEMICONDUCTOR 2KX 8-Bit CMOS SRAM M211201A-MAV92 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit C M O S static RAM fabri­ cated using high perform ance CM OS process technology. This high reliability process cou­

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

schematic diagram tv sony kv 2197

Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
Contextual Info: HOW TO USE THIS BOOK If you know the MODEL NUMBER, Use the Model Index on the INSIDE FRONT COVER. If you know the PRODUCT TYPE, Use the TABBED TABLE OF CONTENTS on page v. Or, use the SELECTION GUIDE TABLES at the front of each tabbed section. If you know the M ODEL

TEC Driver

Abstract: HY6110 HY6210 laser diode driver Laser diode driver high
Contextual Info: HY6210 Laser Diode Driver High Speed Laser Diode Driver TEC Controllers Features: ✦ ✦ ✦ ✦ ✦ ✦ Single ended ECL input 50Ω Data rates up to 622Mbps Programmable bias current Adjustable modulation current Patented “backmatching” thermal management

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

Contextual Info: H Y 2 K6x 81- B it1C M6OA /L S Static R A M ▲ £ £ £ £ £ ! DESCRIPTION FEATURES T h e H Y 6 1 1 6 A / L is a h igh speed, low power, 2,048-w ord by 8-bit C M O S static R A M fa b r i­ c a te d using h ig h - p e r f o r m a n c e C M O S process technology. This high reliability process co u p le d

B511D

Contextual Info: HY5115A Series -HYUNDAI 2K N B-bit CM 0 5 5 RAM DESCRIPTION The HY5115A is a high-speed, law pow er and 2,D48 i B-bits CMOS sia lic RAM fabricated using Hyundai's high perform ance tw in tub CMOS process technology. This high reliability process coupled w ilh innovative circuit

hitec servo hs 311

Abstract: UPC63200 "Current to Voltage Converter" 4-20ma using LM358 AK5390 AD289 AD290A ak5545 SSM2016 LM347 14 PIN BB OPA2134
Contextual Info: 2000 Burr-Brown Product Selection Guide Linear & Mixed Signal Products 2000 LI-545 Burr-Brown Corporation Printed in USA Burr-Brown Corporation Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706 Tel: 520 746-1111 • Twx: 910-952-1111 • Internet: http://www.burr-brown.com/

hyundai

Abstract: 256k x8 SRAM 5V 16MX8
Contextual Info: PART NUMBER ♦HYUNDAI HY XX X X XX XXX X XX XX - XX X T SPEED HYUNDAI_ I HY : Memory Products PRODUCT GROUP 62 : Slow SRAM* 63 : Fast SRAM 67 : Sync. SRAM POWER SUPPLY_ BLANK : 5.0V V : 3.3V/3.0V PROCESS_ BLANK : CMOS B : BiCMOS