HY6116A Search Results

Contextual Info: HY6116A .V« *H Y UNDAI SEMICONDUCTOR M211201B-APR91 FEATURES DESCRIPTION The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­ pled with innovative circuit design techniques,

HY6116ALP 10

Abstract: HY6116ALP HY6116A HY6116AP HY6116
Contextual Info: •HYUNDAI HY6116A Series SEMICONDUCTOR 2 K x 8-bit c m o s s r a m DESCRIPTION The HY6116A is a high-speed, low power 2,048 x 8-bits CMOS static RAM fabricated using high performance CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields

HY6116ALP 10

Abstract: hyundai HY6116ALP
Contextual Info: HY6116A Series »HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6116A-10

Abstract: HY6116A
Contextual Info: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­

HY6116ALP

Abstract: HY6116ALP 10 HY6116AP HY6116A hy6116 cmos series
Contextual Info: HY6116A S e rie s «HYUNDAI 2Kx 8-bit CMOS SRAM DESCRIPTION The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

HY6116A-10

Abstract: HY6116A
Contextual Info: •HYUNDAI HY6116A SEMICONDUCTOR 2KX 8-Bit CMOS SRAM M211201A-MAV92 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit C M O S static RAM fabri­ cated using high perform ance CM OS process technology. This high reliability process cou­

HY6116

Abstract: HY6116A HY6116AL-10 HY61C16A-45 HY61C16A-55 HY61C16AL-25 HY61C16AL-35 HY61C16AL-45 HY61C16AL-55 HY61C16L-45
Contextual Info: -51 16K X m % íi £ CC TAAC max ns) TCAC max (ns) 4 TOE max (ns) CMOS •■< + > TOH min (ns) TOD max (ns) ? S t a t i c RAM ( 2 0 4 8 x 8 ) ft tt € T»P min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N A m I DD

Contextual Info: H Y 2 K6x 81- B it1C M6OA /L S Static R A M ▲ £ £ £ £ £ ! DESCRIPTION FEATURES T h e H Y 6 1 1 6 A / L is a h igh speed, low power, 2,048-w ord by 8-bit C M O S static R A M fa b r i­ c a te d using h ig h - p e r f o r m a n c e C M O S process technology. This high reliability process co u p le d

B511D

Contextual Info: HY5115A Series -HYUNDAI 2K N B-bit CM 0 5 5 RAM DESCRIPTION The HY5115A is a high-speed, law pow er and 2,D48 i B-bits CMOS sia lic RAM fabricated using Hyundai's high perform ance tw in tub CMOS process technology. This high reliability process coupled w ilh innovative circuit

hyundai

Abstract: 256k x8 SRAM 5V 16MX8
Contextual Info: PART NUMBER ♦HYUNDAI HY XX X X XX XXX X XX XX - XX X T SPEED HYUNDAI_ I HY : Memory Products PRODUCT GROUP 62 : Slow SRAM* 63 : Fast SRAM 67 : Sync. SRAM POWER SUPPLY_ BLANK : 5.0V V : 3.3V/3.0V PROCESS_ BLANK : CMOS B : BiCMOS