HAT2022R Search Results

012AA

Contextual Info: A D E - 2 0 8 - 4 4 0 F Z HAT2022R Silicon N Channel Power MOS FET HITACHI Application 7h. Ed iti on J a n . 1996 SOP-8 High speed power switching Features • • • • Low on-resistance Capable of 4V gate drive Low drive current High density mounting

HAT2022R

Abstract: HAT2022R-EL-E
Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1158-1200 Previous: ADE-208-440J Rev.12.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D

Hitachi DSA0074

Abstract: HAT2022R MS-012AA 40X40X
Contextual Info: ADE–208–440 F Z HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting

Contextual Info: ADE–208–440 F Z HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting

Hitachi DSA00280

Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440J Z 11th Edition Feb. 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 5

Hitachi DSA002752

Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 J Z 11th Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Hitachi DSA002751

Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 I Z 10th Edition July 1, 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4

Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-440 F 7th Edition Features • • • • Low on-resistance Capable o f 4 V gate drive Low drive current High density mounting Outline S O P -6 5 6 7 8 % D D D D 1,2,3 Source

Hitachi DSA001651

Contextual Info: HAT2022R Silicon N-Channel Power MOS FET Preliminary November 1996 Application High speed power switching Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 7 65

HAT2022R

Abstract: MS-012AA DSA003731
Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 J Z 11th Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D

Hitachi DSA002719

Contextual Info: HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 F 7th Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline HAT2022R Absolute Maximum Ratings Ta = 25°C

Contextual Info: HAT2022R Silicon N-Channel Power MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline S O P -8 5 6 7 8 D D D D

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

HAT2022R

Abstract: HAT2022R-EL-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.