FLL331 Search Results

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

transistor 800V 1A

Contextual Info: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications

Bc177a

Contextual Info: 37E D SEMELAB LTD fll331fl7 DDD0031 5 ISMLB - y - X J - 01 — type No. Package Vc e o •c cont hFEc PD V c e /'C B C1 0 7 BC107A BC107B BC108 BC108A SCRE E N SCREEN SCREEN SCRE E N SCREEN NPN NPN NPN NPN NPN T018 T018 T018 T018 T018 45 45 45 20 20 0.1 0.1

Contextual Info: bOE D “ • fll331fl7 DDQO'lbb 370 ■ SMLB SENELAB PLC '^T'3V'¿ó SEMELAB D2004UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 10W -28V -1G H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2

BUL52A

Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Contextual Info: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN

sml752r4gn

Contextual Info: S E ME LA B _ m PL C bGE D fll331fl7 D D D G Ô M t bTl • S M L B i = MOS POWER I M 4 T~-'3>°i - \3 SEME “ ■ I - 800V 750V 800V 750V SML802R4GN SML752R4GN SML802R8GN SML752R8GN LAB 2.4012 2.4012 2.8012 2.8012 4.3A 4.3A 4.0A 4.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

2N2210

Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
Contextual Info: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A

801R2AN

Abstract: SML801R2AN SML751R2AN NC160 22G diode SML751R4AN SML801R4AN 801R4AN
Contextual Info: SEMELÂB PLC bOE D fll331û? OGOG77fl 22G ISMLB MOS POWER à IN I SML801R2AN SML751R2AN SML801R4AN SML751R4AN SEME LAB 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20Q 1.2011 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

4040BN

Abstract: 4030BN sml3530bn SML4030BN SML4040BN
Contextual Info: SENELAB PLC bOE D fll331fl7 OOOGblb GTE Mil ISMLB MOS POW ER d I 3 °i-is ' SEME SML4030BN SML3530BN SML4040BN SML3540BN LAB 400V 350V 400V 350V 0.3012 0.3012 0.4012 0.40Q 18.5A 18.5A 16.0A 16.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

BSW66

Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
Contextual Info: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73

BD267

Contextual Info: SEMELAB LTD 37E I fll331fl? 0000040 3 • S d L B I - 3 3 - 6 1 ^ 1 i tj j ■type No. SST' Package V q e o . cont ^FE VCE/>C PD BD262B BD263A BD263B BD266 BD267 PNP NPN NPN PNP NPN T0126 T0126 T0126 T0220 T0220 100 100 120 60 60 4 4 4 8 8 750rain 750min

Contextual Info: SENELABPLC bOED • fll33107 DGGQb7h 5 7 7 M S H L B lili MOS POWER 4 ' ~ T ' 3 > CM 3 SEM E LAB SML802R4KN SML802R8KN 800V 4.7A 2.4012 800V 4.4A 2.8012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

ba606

Abstract: BU500
Contextual Info: S E N E LA B LTD 37E D fll331fl7 D D Ü 0 0 S 4 3 • S f l L B «'¡I { t ¿S ÍÉ £ á U & 3 ft fc a n ¿^ ¡£ U 3 t t H fií¿á Type No. Option"*^ Polarlty Paoka9e V CEO ¡ £ nt cont hF E @ VCE/>C Pd BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN

HT1 npn

Contextual Info: SENELAB LTD 37E D fll331fl7 000DD44 0 .'-'H JU . Ht.1. j U' \\\/'yv TV peN o. ? O p t io n 1'*7 Polarl,y Packa9 e VC e o ¡ £ n, hF E @ /¿.-V : PD V C E /IC BDS10 BDS11 BDS12 BDS13 BDS14 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP TO220M T0220M

2N4033

Abstract: 2n4026
Contextual Info: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028

BUP39

Abstract: 0121 LE17 t387
Contextual Info: SEMELAB LTD 37E D • Ô1331Ô7 00QQ14b & ■ SMLB _ V SEMELAB SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR FEATURES • High breakdown voltage • Wide area of secondary breakdown • Very fast switching • High reliability SOT-93 ABSOLUTE MAXIMUM RATINGS AT 25°C

BUP38

Abstract: LE17
Contextual Info: - SEMELAB 37E LTD Û1331Û7 D Q0QQ14M ISMLB •1 S E M E LA B JUN 2 6 1987 4 'S m g - i , 4Î T - 3 3-13 -• 1 BUP38 SILICO N N P N MECHANICAL DATA EPITAXIAL PLANAR FEATURES =j—r T 12.7 21 • High breakdown voltage imi • Wide area of secondary breakdown

Contextual Info: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN

s34 schottky diode

Abstract: SB3009 sb30-09 s34 schottky s34 DIODE schottky SOT93M
Contextual Info: 4ÔE D Ô1331Û7 ÜDDD4S1 bTfl 5EMELABI SENELAB SCHOTTKY BARRIER DIODES 3 LTD ' l MECHANICAL DATA Dimensions in mm New Product In response to the significant demand for High Voltage Schottky Barrier Rectifier Diodes for use in Advanced Power Supplies and DC/DC Converters, SEMELAB

CR diode transient

Abstract: 4065AN sml3565an SML3580AN
Contextual Info: SEflELAB PLC bGE D 0133187 □□G07SG m i ISMLB lili SEME SML4065AN SML3565AN SML4080AN SML3580AN LAB 400V 10.0A 0.6512 350V 10.0A 0.6512 400V 9.0A 0.8012 350V 9.0A 0.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE *— _2.0 3.5 r ^ * ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5

BFC11

Contextual Info: lili i t t i lili SEME BFC11 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches 11 8 (0 4 6 3 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS } I D(cont) 800V 27A ^DS(on) 0.30Q 'DSS Terminal 1 Terminal 3 Source 2* Gate

Contextual Info: SEMELAB 37E D LTD JUL 0 6 1988 • Ô1331Ô7 DGODlfiM 5 SEMELAB BUV42A NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M E C H A N IC A L D A T A D im e nsion s in mm

Contextual Info: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES