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    751R2 Search Results

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    751R2 Price and Stock

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    RCD Components Inc 175-1R2-JBW

    Resistor Precision Wirewound 1.2 Ohm 5% 10W ?50ppm/?C Conformal Axial Leaded Bulk - Bulk (Alt: 175-1R2-JBW)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 175-1R2-JBW Bulk 15 Weeks 25
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    Vishay Intertechnologies AH0751R280JE66

    AH075 1.28 5% E66 E3 - Bulk (Alt: AH0751R280JE66)
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    Avnet Americas AH0751R280JE66 Bulk 24 Weeks 30
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    • 100 $20.89
    • 1000 $20.08
    • 10000 $19.98
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    Mouser Electronics AH0751R280JE66
    • 1 $37.91
    • 10 $27.26
    • 100 $21.10
    • 1000 $20.49
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    Vishay Intertechnologies RMB0751R210FS14

    - Bag (Alt: RMB0751R210FS14)
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    Avnet Americas RMB0751R210FS14 Bag 7 Weeks 100
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    • 100 $7.82
    • 1000 $7.05
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    Mouser Electronics RMB0751R210FS14
    • 1 $15.05
    • 10 $11.11
    • 100 $7.90
    • 1000 $6.99
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    Newark RMB0751R210FS14 Bulk 100
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    • 100 $7.82
    • 1000 $7.19
    • 10000 $6.88
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    Vishay Intertechnologies RMB0751R200JS00MG7

    - Bag (Alt: RMB0751R200JS00MG7)
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    Avnet Americas RMB0751R200JS00MG7 Bag 7 Weeks 10
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    • 10 $14.61
    • 100 $13.24
    • 1000 $10.84
    • 10000 $10.84
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    Mouser Electronics RMB0751R200JS00MG7
    • 1 $20.93
    • 10 $14.76
    • 100 $11.04
    • 1000 $10.45
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    Newark RMB0751R200JS00MG7 Bulk 10
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    • 10 $14.61
    • 100 $13.44
    • 1000 $12.86
    • 10000 $12.86
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    RCD Components Inc 175-1R2-JTW

    Resistor Precision Wirewound 1.2 Ohm 5% 10W ?50ppm/?C Conformal Axial Leaded T/R - Tape and Reel (Alt: 175-1R2-JTW)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 175-1R2-JTW Tape & Reel 16 Weeks 500
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    751R2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT801R2cN

    Abstract: C 632 S1M
    Contextual Info: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN 751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q


    OCR Scan
    q0gq777apt801r2cnapt751r2cnapt801r4cn+7apt751r4cn751r2cn801r2cn751r4gcn801r4cng-100c 632 s1m PDF

    T3D DIODE

    Abstract: T3D 65 diode t3d 68 diode Diode T3D 24 T3D 89 DIODE T3D 36 diode T3D 28 diode Diode T3D 03 T3D 78 diode Diode T3D 26
    Contextual Info: SEMELAB PLC bOE Ô1331Ô7 DD0D622 Ibfl • S M L B D 4 MOS POWER EFFE T V i ■- '3 m i SML801R2CN 751R2CN SML801R4CN SML751R4CN SEM E LAB 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.2012 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    dd0d622sml801r2cnsml751r2cnsml801r4cn+16sml751r4cn751r2cn801r2cn751r4gcn801r4cno-254aat3d diodet3d 65 diodet3d 68 diodediode t3d 24t3d 89 diodet3d 36 diodet3d 28 diodediode t3d 03t3d 78 diodediode t3d 26 PDF

    801R4BN

    Abstract: 801R2BN APT801R2BN
    Contextual Info: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® APT801R2BN 751R2BN APT801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


    OCR Scan
    apt801r2bnapt751r2bnapt801r4bnapt751r4bn+5801r2bn751r4bn751r2bn801r4bnapt801r2/751r2/801r4/751r4bn PDF

    801R2BN

    Abstract: APT801R2BN 801R4BN 801r2 APT751R2BN APT751R4BN APT801R4BN
    Contextual Info: o A D V A N CED R o w er Te c h n o l o g y D APT801R2BN 751R2BN APT801R4BN APT751R4BN Ô S POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40a 1.40a N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tr = 25°C unless otherwise specified.


    OCR Scan
    apt801r2bnapt751r2bnapt801r4bnapt751r4bn+7751r2bn801r2bn751r4bn801r4bn2/751r2/801r4/751r4bno-247ad801r2 PDF

    801R2AN

    Abstract: SML801R2AN SML751R2AN NC160 22G diode SML751R4AN SML801R4AN 801R4AN
    Contextual Info: SEMELÂB PLC bOE D fll331û? OGOG77fl 22G ISMLB MOS POWER à IN I SML801R2AN 751R2AN SML801R4AN SML751R4AN SEME LAB 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20Q 1.2011 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan
    ogog77flsml801r2ansml751r2ansml801r4an+8sml751r4an751r2801r2an751r4an801r4antq-204aanc16022g diode PDF

    SML801R4BN

    Abstract: SML751R2BN LE17 SML751R4BN SML801R2BN max2301 751R2BN h-12-H
    Contextual Info: INI SEMELAB PLC 6133107 bDE D OOOOfaSb ?6 T • S M L B _ MOS POWER E ^ E INI ä r T - l> ct - i S SEME SML801R2BN 751R2BN SML801R4BN SML751R4BN LAB 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Í2 1.20Í2 1.40Ü 1.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    t-39-issml801r2bnsml751r2bnsml801r4bn+9sml751r4bn751r2bn801r2ein751r4bn801r4bno-247adle17max2301h-12-h PDF

    Contextual Info: ADVANCED P OWE R TECHNOLOGY 41E D • 0 5 5 7 1 0 1 OOOQMflfi 35fl « A V P ■ R A d va n ced r J PO W ER T JviS Te c h n o lo g y APT801R2AN 751R2AN APT801R4AN APT751R4AN POWER MOS IV 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 a 1.20 i2 1.40 ß 1.40 £2


    OCR Scan
    apt801r2anapt751r2anapt801r4anapt751r4an+6751r2an801r2an751r4an801r4anapt801r2/751r2/801r4/751r4an100ms PDF

    APT801R2AN

    Abstract: 801R4AN 801R2AN APT751R2AN APT751R4AN APT801R4AN 801r2
    Contextual Info: ADVANCED POWER TECHNOLOGY M ^E DESTEDT D OOOOMfl fl 35Ô • AVP A d va n c e d P o w er t j i - i s Te c h n o lo g y POWER MOS IV APT801R2AN 751R2AN APT801R4AN APT751R4AN 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 1.20 1.40 1.40 £2 Í2 £2 Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    apt801r2anapt751r2anapt801r4anapt751r4an+6751r2an801r2an751r4an801r4ant0-204aa801r2 PDF

    Contextual Info: A dvanced P ow er Tec h n o lo g y APT801R2BN 751R2BN APT801R4BN APT751R4BN POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    apt801r2bnapt751r2bnapt801r4bnapt751r4bn+301r2bnapt801r2/751r2/801r4/751r4bno-247ad PDF

    sml801

    Contextual Info: INI SEMELAB 6133107 bDE D PLC OOOOfaSb ?6 T • S M L B _ MOS POWER E ^ E INI ä r T - l> ct - i S SEME SML801R2BN 751R2BN SML801R4BN SML751R4BN LAB 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Í2 1.20Í2 1.40Ü 1.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan
    sml801r2bnsml751r2bnsml801r4bnsml751r4bn+6801r2ein751r4bn751r2bn801r4bno-247adsml801 PDF

    801r2dn

    Abstract: 5530DN 35M4 SML551R3DN 4520D SML902RDN 7516-D 5025DN 4065d SML5085DN
    Contextual Info: SEM E LA B PLC bOE J> • 0 1 3 3 10 7 □ □ □ 0 5 ‘iE 63^ ■ SHLB 'T - y\ - l ^ ELECTRICAL SPECIFICATIONS FOR SEMELAB MOS POWER 4 DICE MOS POWER DIE SIZE 104 199 X 204 MILS 4 9 / DIE PACK 105 290 X 250 (MILS) 2 5 /D IE PACK 106 254 X 414 (MILS) 6 0 /D IE


    OCR Scan
    1004rdnsml904rdn802r4dn752r4dn+14sml601r3dnsml551r3dn49/diesml5085dnsml4585dn4065dn801r2dn5530dn35m44520dsml902rdn7516-d5025dn4065d PDF

    801R2BN

    Abstract: APT801R2BN
    Contextual Info: A dvanced POW ER Te c h n o l o g y O D Ô APT801R2BN 751R2BN APT801R4BN APT751R4BN s ü í ’W tR MOS 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20í> 1.20Q 1.400 1.40<> N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Ail Ratings: T c = 25 C unless otherwise specified.


    OCR Scan
    apt801r2bnapt751r2bnapt801r4bnapt751r4bn+6751r2bn801r2bn751r4bn801r4bnapt801r2/751r2/801r4/751r4bn PDF