GaAs FET HEMT Chips
Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for
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FLC301XP
Contextual Info: FLC301XP Füjrrsu GaAs F E T and H EM T Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability DESCRIPTION The FLC301XP chip is a power GaAs FET that is designed for
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fujitsu gaas fet
Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for
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FLC30
Abstract: fujitsu hemt FLC307XP
Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for
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C-Band Power GaAs FET HEMT Chips
Abstract: fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt
Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for
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flc307xpfcsi0598m200c-band power gaas fet hemt chipsfujitsu gaas fet+2gaas fet hemt chipsfujitsu hemt
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Contextual Info: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Contextual Info: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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flc081xpflc151xpflc301xpfsx017x+12fsx51xfsx52xflx252xvflk012xpflk022xvflk052xvfsx52fujitsu microwavexp 215flk202fsx51flc151
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FLC30
Abstract: FLC307XP fujitsu gaas fet fujitsu hemt
Contextual Info: FLC307XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r]add = 37%(Typ.) Proven Reliability DESCRIPTION
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FLC301XP
Abstract: 32 mag wire
Contextual Info: FLC30JXP GaAs F E T and H E M I Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Symbol Hem Saturated Drain Current IDSS Test Conditions 1200 1800 mA - 600 - mS -1.0 -2.0 -3.5 V -5 - - V 33.5 34.8 - dBm 8.5 9.5 - dB VDS = 5V, Iq s = 800mA Pinch-off Voltage
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GR-1244-CORE
Abstract: ZL50018 ZL50018GAC ZL50018QCC 99 mfu
Contextual Info: ZL50018 2 K Digital Switch with Enhanced Stratum 3 DPLL Data Sheet Features 2048 channel x 2048 channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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ZL50018
Abstract: GR-1244-CORE ZL50018GAC ZL50018QCC MFU 78
Contextual Info: ZL50018 2 K Digital Switch with Enhanced Stratum 3 DPLL Data Sheet Features November 2006 • 2048 channel x 2048 channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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GR-1244-CORE
Abstract: ZL50021 ZL50021GAC ZL50021QCC
Contextual Info: ZL50021 Enhanced 4 K Digital Switch with Stratum 3 DPLL Data Sheet Features 4096-channel x 4096-channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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GR-1244-CORE
Abstract: ZL50021 ZL50021GAC ZL50021GAG2 ZL50021QCC
Contextual Info: ZL50021 Enhanced 4 K Digital Switch with Stratum 3 DPLL Data Sheet Features 4096-channel x 4096-channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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dpm001
Abstract: N203 zl50018 PMS-100 MFU C0 37 PMS01
Contextual Info: ZL50018 2 K Digital Switch with Enhanced Stratum 3 DPLL Data Sheet Features Ordering Information ZL50018GAC 256 Ball PBGA Trays ZL50018QCC 256 Lead LQFP Trays ZL50018GAG2 256 Ball PBGA* Trays *Pb Free Tin/Silver/Copper 32 serial TDM input, 32 serial TDM output
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Philips FA 145
Abstract: FLR13 VCT 492 x GR-1244-CORE ZL50021 ZL50021GAC ZL50021GAG2 ZL50021QCC SCA-7
Contextual Info: ZL50021 Enhanced 4 K Digital Switch with Stratum 3 DPLL Data Sheet Features Ordering Information ZL50021GAC 256 Ball PBGA Trays ZL50021QCC 256 Lead LQFP Trays ZL50021GAG2 256 Ball PBGA* Trays *Pb Free Tin/Silver/Copper 32 serial TDM input, 32 serial TDM output
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Philips FA 145
Contextual Info: ZL50021 Enhanced 4 K Digital Switch with Stratum 3 DPLL Data Sheet Features 4096-channel x 4096-channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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Contextual Info: ZL50018 2 K Digital Switch with Enhanced Stratum 3 DPLL Data Sheet Features 2048 channel x 2048 channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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top side marking b2
Abstract: Raltron Electronics part marking guide crystal GR-1244-CORE ZL50021 ZL50021GAC ZL50021QCC phase sequence detector cfru TI18
Contextual Info: ZL50021 Enhanced 4 K Digital Switch with Stratum 3 DPLL Data Sheet Features 4096-channel x 4096-channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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zl500214096-channelgr-1244-corezl50021gac+8256-ballzl50021qcc256-leadtop side marking b2raltron electronics part marking guide crystalphase sequence detectorcfruti18
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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TI18
Abstract: Raltron Electronics part marking guide crystal
Contextual Info: ZL50018 2 K Digital Switch with Enhanced Stratum 3 DPLL Data Sheet Features 2048 channel x 2048 channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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ZL50018
Abstract: GR-1244-CORE ZL50018GAC ZL50018QCC IEEE 1149.1 JTAG
Contextual Info: ZL50018 2 K Digital Switch with Enhanced Stratum 3 DPLL Data Sheet Features November 2006 • 2048 channel x 2048 channel non-blocking digital Time Division Multiplex TDM switch at 8.192 and 16.384 Mbps or using a combination of ports running at 2.048, 4.096, 8.192 and/or
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siliconix vmp4
Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc
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99ch36282cke67vwusiliconix vmp4irf540 27.12 mhz+8siemens mtt 95 a 12 nclass e power amplifierirf510 secrf npn power transistor 5 watt 2.4 ghzirf540 mosfet with maximum vds 30 vvmp4class e amplifierirf510 sec mosfet
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FLC081XP
Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Contextual Info: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A
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