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    F1S70N06 Search Results

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    F1S70N06 Price and Stock

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    Fairchild Semiconductor Corporation RF1S70N06SM9A

    Trans MOSFET N-CH Si 60V 70A 3-Pin(2+Tab) TO-263AB T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RF1S70N06SM9A 73 1
    • 1 $3.72
    • 10 $2.42
    • 100 $1.75
    • 1000 $1.75
    • 10000 $1.75
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    Rochester Electronics RF1S70N06SM9A 1,600 1
    • 1 -
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    • 100 $2.12
    • 1000 $1.90
    • 10000 $1.78
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    Fairchild Semiconductor Corporation RF1S70N06SM

    MOSFET N-Channel 60V 70A (Tc) TO-263-3
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    Rochester Electronics RF1S70N06SM 3,200 1
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    • 100 $2.09
    • 1000 $1.87
    • 10000 $1.76
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    Harris Semiconductor RF1S70N06SM

    MOSFET N-Channel 60V 70A (Tc) TO-263-3
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    Rochester Electronics RF1S70N06SM 6,785 1
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    • 100 $2.09
    • 1000 $1.87
    • 10000 $1.76
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    HARTING Technology Group RF1S70N06DPAK

    70A, 60V, 0.014 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    ComSIT USA RF1S70N06DPAK 2,000
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    f RF1S70N06SM

    Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA RF1S70N06SM 350
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    F1S70N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RFP70N06

    Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Contextual Info: RFG70N06, RFP70N06, F1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 F1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω


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    rfg70n06rfp70n06rf1s70n06smta49007+8o-247o-220abo-263ab175octb334an9321an9322rf1s70n06sm9a PDF

    rfp70n06

    Contextual Info: RFG70N06, RFP70N06, F1S70N06SM Data Sheet Title FG7 06, P70 6, 1S7 06S bt A, V, 14 m, anwer OSTs utho eyrds ter- July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


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    rfg70n06rfp70n06rf1s70n06smta49007 PDF

    RFP70N06

    Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
    Contextual Info: RFG70N06, RFP70N06, F1S70N06, F1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM


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    rfg70n06rfp70n06rf1s70n06rf1s70n06sm+6o-247175ocf1s70n06rf1s70n06sm9aan7254an7260 PDF

    RFP70N06

    Abstract: TA78440 F1S70N06 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Contextual Info: RFG70N06, RFP70N06, F1S70N06, F1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


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    rfg70n06rfp70n06rf1s70n06rf1s70n06sm+9ta78440o-247o-220abo-262aao-263abf1s70n06an9321rf1s70n06sm9atb334 PDF

    0N06

    Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
    Contextual Info: RFG70N06, RFP70N06, F1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.


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    rfg70n06rfp70n06rf1s70n06smrfp70+80n06so-247o-220ab175octb3340n06rf1s70n06sm9af1s70n06 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    F1S70N06

    Contextual Info: P *3 3 S RFG70N06, RFP70N06, F1S70N06, F1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili­


    OCR Scan
    rfg70n06rfp70n06rf1s70n06rf1s70n06sm+6014i205e-411e-51e-3046e-4f1s70n06 PDF

    RFP70N06

    Abstract: F1S70N06 TA78440 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Contextual Info: RFG70N06, RFP70N06, F1S70N06, F1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


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    rfg70n06rfp70n06rf1s70n06rf1s70n06sm+9ta78440o-247o-220abo-262aao-263abf1s70n06an9321rf1s70n06sm9atb334 PDF

    F1S70N06

    Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
    Contextual Info: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, F1S70N06, F1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model


    OCR Scan
    rfg70n06rfp70n06rf1s70n06rf1s70n06sm+13014i223e-329e-349e-750e-784e-9f1s70n0670n061s70n06fp70n10i5rf1s70nfp70n06 PDF

    Contextual Info: RFG70N06, RFP70N06, F1S70N06, F1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original
    rfg70n06rfp70n06rf1s70n06rf1s70n06sm+5ta78440o-247o-220abo-262aao-263ab PDF