RF1S70N Search Results

RFP70N03

Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model

RFP70N06

Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω

rfp70n06

Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet Title FG7 06, P70 6, 1S7 06S bt A, V, 14 m, anwer OSTs utho eyrds ter- July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

f1s70n03

Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

rfp70n03

Contextual Info: [Q RFP70N03, RF1S70N03, RF1S70N03SM HARRIS S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 70A ,30V • rDS 0N = 0.01012 • Temperature Compensating PSPICE Model

AN9321

Abstract: AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Features • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RF1S70N03SM9A

Contextual Info: RFP70N03, RF1S70N03SM in t e r r ii D ata S h eet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power M O SFETs are manufactured using the M egaFE T process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RFP70N06

Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
Contextual Info: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM

RFP70N06

Abstract: TA78440 F1S70N06 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Contextual Info: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

AN9321

Abstract: AN9322 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
Contextual Info: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding

0N06

Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.

RFP70N03

Contextual Info: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB

F1S70N06

Contextual Info: P *3 3 S RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili­

RFP70N06

Abstract: F1S70N06 TA78440 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Contextual Info: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

F1S70N06

Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
Contextual Info: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model

Contextual Info: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

F1S70N03

Abstract: rfp70n03
Contextual Info: RFP70N03, RF1S70N03, RF1S70N03SM IHARRIS S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

70n06 to 247

Abstract: RFP70N06 70n06
Contextual Info: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB

Contextual Info: HAFRFRIS RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A,30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

RFP70N06

Contextual Info: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum