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    0N06 Search Results

    0N06 Datasheets (66)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HSBA50N06
    		Huashuo Semiconductor N-channel 60V MOSFET with 50A continuous drain current, 12mΩ typical RDS(ON), low gate charge, and high cell density trench technology for fast switching applications. Original PDF
    badge SLM50N06T
    		Maplesemi 60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, low gate charge of 27.2nC, and 100% avalanche tested for high ruggedness and fast switching performance. Original PDF
    badge JMTP170N06A
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 10A N-channel enhancement mode Power MOSFET in SOP-8 package with RDS(on) less than 15.9 mΩ at VGS = 10V, featuring advanced trench technology, low gate charge, and suitability for load switch, PWM, and power management applications. Original PDF
    badge SLB150N06G
    		Maplesemi 60V N-Channel MOSFET with 150A continuous drain current, 2.4mΩ typical RDS(on) at VGS = 10V, TO-263 package, suitable for high-efficiency switching in low-voltage power applications. Original PDF
    badge JMTP330N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 5A, 32mΩ N-channel Power Trench MOSFET in SOP-8 package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. Original PDF
    badge JMTG060N06A
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 90A N-channel enhancement mode power MOSFET in a PDFN5x6-8L package with RDS(on) less than 4.9 mΩ at VGS = 10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge HSK10N06
    		Huashuo Semiconductor HSK10N06 is a 60V N-channel MOSFET with 10A continuous drain current, 40mΩ maximum RDS(ON), low gate charge, and fast switching for synchronous buck converters. Original PDF
    badge JMTI290N06A
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 20A N-channel enhancement mode power MOSFET with RDS(on) less than 29mΩ at VGS=10V and 40mΩ at VGS=4.5V, featuring advanced trench technology for efficient power management in TO-251-4R package. Original PDF
    badge MDD50N06D
    		Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    badge SLP150N06T
    		Maplesemi 60V N-Channel MOSFET with 150A continuous drain current, 3.1mΩ typical RDS(on) at VGS = 10V, suitable for high-efficiency power switching applications. Original PDF
    badge CJU20N06A
    		JCET Group N-channel MOSFET with 60V drain-source voltage, 20A continuous drain current, 26mΩ typical on-resistance at 10V gate voltage, low gate charge, and TO-252-2L package for power switching applications. Original PDF
    badge SLM120N06G
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, DFN5x6 package, suitable for DC/DC converters and power management applications requiring low on-resistance and high switching performance. Original PDF
    badge HKTD50N06
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET HKTD50N06 with 60V drain-source voltage, 50A continuous drain current, 17mΩ on-resistance at 10V VGS, TO-252 package, suitable for high-density power applications. Original PDF
    badge JMTG100N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 50A dual N-channel enhancement mode power MOSFET in PDFN5x6-8L-D package with RDS(ON) less than 12.9mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. Original PDF
    badge SLB80N06T
    		Maplesemi N-channel MOSFET, 60V, 80A continuous drain current, 6.5 mΩ typical RDS(on) at 10V VGS, TO-263 package, designed for high-efficiency power switching applications with low gate charge and fast switching performance. Original PDF
    badge SL60N06
    		SLKOR VDS=60V, ID=60A, RDS(ON)<11.5mΩ @ VGS=10V, high EAS, good heat dissipation, high ESD, power switching. Original PDF
    badge JMTG070N06A
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 70A N-channel enhancement mode power MOSFET in a PDFN5x6-8L package with RDS(on) less than 5.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency in power management and load switching applications. Original PDF
    badge JMTP110N06D
    		Jiangsu JieJie Microelectronics Co Ltd Dual N-channel enhancement mode power MOSFET in SOP-8 package, 60V drain-source voltage, 11A continuous drain current, RDS(on) less than 14mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency. Original PDF
    badge SLD50N06G
    		Maplesemi 60V N-Channel MOSFET with 50A continuous drain current, 8.6mΩ typical RDS(on) at VGS = 10V, designed for low voltage DC/DC converters and high efficiency power management applications requiring fast switching and high ruggedness. Original PDF
    badge HKTD80N06
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 60V drain-source voltage, 80A continuous drain current, 8mΩ maximum on-resistance at VGS=10V, available in TO-252 package. Original PDF
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    0N06 Price and Stock

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    Infineon Technologies AG IPG20N06S4L14AATMA1

    - Tape and Reel (Alt: IPG20N06S4L14AATMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPG20N06S4L14AATMA1 Tape & Reel 5,000 39 Weeks 5,000
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    Newark () IPG20N06S4L14AATMA1 Cut Tape 17,989 1
    • 1 $2.64
    • 10 $2.64
    • 100 $1.31
    • 1000 $1.06
    • 10000 $0.95
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    IPG20N06S4L14AATMA1 Tape & Reel 17,989 100
    • 1 -
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    • 100 $1.31
    • 1000 $1.06
    • 10000 $0.95
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    Rochester Electronics IPG20N06S4L14AATMA1 365,156 1
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    • 100 $0.78
    • 1000 $0.65
    • 10000 $0.58
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    Win Source Electronics IPG20N06S4L14AATMA1 18,964
    • 1 -
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    • 100 $1.06
    • 1000 $0.82
    • 10000 $0.82
    		Buy Now

    Infineon Technologies AG IPI80N06S208AKSA2

    Trans MOSFET N-CH 55V 80A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI80N06S208AKSA2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPI80N06S208AKSA2 Tube 2,500 1
    • 1 $1.33
    • 10 $1.33
    • 100 $1.33
    • 1000 $1.33
    • 10000 $1.33
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    Infineon Technologies AG IPP040N06N3GXKSA1

    Trans MOSFET N-CH 60V 90A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP040N06N3GXKSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPP040N06N3GXKSA1 Tube 150 50
    • 1 -
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    • 100 $0.54
    • 1000 $0.50
    • 10000 $0.50
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    EBV Elektronik IPP040N06N3GXKSA1 1,000 9 Weeks 500
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    Maritex IPP040N06N3GXKSA1 189 1
    • 1 $1.50
    • 10 $1.31
    • 100 $0.94
    • 1000 $0.76
    • 10000 $0.76
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    Infineon Technologies AG IPP020N06NAKSA1

    Power MOSFET, N Channel, 60 V, 120 A, 0.0018 ohm, TO-220, Through Hole - Rail/Tube (Alt: IPP020N06NAKSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPP020N06NAKSA1 Tube 50 8 Weeks 50
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    • 100 $0.83
    • 1000 $0.76
    • 10000 $0.76
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    TME IPP020N06NAKSA1 1
    • 1 $3.44
    • 10 $2.98
    • 100 $2.09
    • 1000 $1.99
    • 10000 $1.99
    		Get Quote

    onsemi RFP50N06

    N-Channel Power MOSFET 60V, 50A, 22mO - Rail/Tube (Alt: RFP50N06)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RFP50N06 Tube 30 26 Weeks 50
    • 1 -
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    • 100 $0.99
    • 1000 $0.97
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