0N06 Search Results
0N06 Datasheets (65)
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HSBA50N06
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Huashuo Semiconductor | N-channel 60V MOSFET with 50A continuous drain current, 12mΩ typical RDS(ON), low gate charge, and high cell density trench technology for fast switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLB150N06G
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Maplesemi | 60V N-Channel MOSFET with 150A continuous drain current, 2.4mΩ typical RDS(on) at VGS = 10V, TO-263 package, suitable for high-efficiency switching in low-voltage power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLM50N06T
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Maplesemi | 60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, low gate charge of 27.2nC, and 100% avalanche tested for high ruggedness and fast switching performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTG060N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 90A N-channel enhancement mode power MOSFET in a PDFN5x6-8L package with RDS(on) less than 4.9 mΩ at VGS = 10V, suitable for load switching, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTP330N06D
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 5A, 32mΩ N-channel Power Trench MOSFET in SOP-8 package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HSK10N06
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Huashuo Semiconductor | HSK10N06 is a 60V N-channel MOSFET with 10A continuous drain current, 40mΩ maximum RDS(ON), low gate charge, and fast switching for synchronous buck converters. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MDD50N06D
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Microdiode Semiconductor | 60V N-Channel Enhancement Mode MOSFET, RDS(ON) ≤17mΩ @ VGS=10V, ID=20A, High Switching Speed, Improved dv/dt capability, Switching application. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTI290N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 20A N-channel enhancement mode power MOSFET with RDS(on) less than 29mΩ at VGS=10V and 40mΩ at VGS=4.5V, featuring advanced trench technology for efficient power management in TO-251-4R package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTP170N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 10A N-channel enhancement mode Power MOSFET in SOP-8 package with RDS(on) less than 15.9 mΩ at VGS = 10V, featuring advanced trench technology, low gate charge, and suitability for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HKTD80N06
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Shenzhen Heketai Electronics Co Ltd | N-channel Power MOSFET with 60V drain-source voltage, 80A continuous drain current, 8mΩ maximum on-resistance at VGS=10V, available in TO-252 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLP150N06G
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Maplesemi | 60V N-Channel MOSFET with 150A continuous drain current, 2.1mΩ typical RDS(on) at VGS = 10V, suitable for low-voltage DC/DC converters and high-efficiency power management applications requiring fast switching and high ruggedness. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CJU50N06A
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JCET Group | 60V N-channel Power MOSFET in TO-252-2L package with 50A continuous drain current, 17mΩ on-resistance at 4.5V VGS, low gate charge, fast switching capability, and avalanche energy specified. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLB80N06T
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Maplesemi | N-channel MOSFET, 60V, 80A continuous drain current, 6.5 mΩ typical RDS(on) at 10V VGS, TO-263 package, designed for high-efficiency power switching applications with low gate charge and fast switching performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTP110N06D
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Jiangsu JieJie Microelectronics Co Ltd | Dual N-channel enhancement mode power MOSFET in SOP-8 package, 60V drain-source voltage, 11A continuous drain current, RDS(on) less than 14mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTG070N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 70A N-channel enhancement mode power MOSFET in a PDFN5x6-8L package with RDS(on) less than 5.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency in power management and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLD50N06G
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Maplesemi | 60V N-Channel MOSFET with 50A continuous drain current, 8.6mΩ typical RDS(on) at VGS = 10V, designed for low voltage DC/DC converters and high efficiency power management applications requiring fast switching and high ruggedness. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SL60N06
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SLKOR | VDS=60V, ID=60A, RDS(ON)<11.5mΩ @ VGS=10V, high EAS, good heat dissipation, high ESD, power switching. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLM120N06G
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Maplesemi | 60V N-Channel MOSFET with 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, DFN5x6 package, suitable for DC/DC converters and power management applications requiring low on-resistance and high switching performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SLP150N06T
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Maplesemi | 60V N-Channel MOSFET with 150A continuous drain current, 3.1mΩ typical RDS(on) at VGS = 10V, suitable for high-efficiency power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
0N06 Price and Stock
Taiwan Semiconductor TSM850N06CX-RFGMOSFET N-CHANNEL 60V 3A SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM850N06CX-RFG | Digi-Reel | 21,661 | 1 |
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Buy Now | |||||
Infineon Technologies AG IPD30N06S2L13ATMA4MOSFET N-CH 55V 30A TO252-31 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD30N06S2L13ATMA4 | Cut Tape | 15,266 | 1 |
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Buy Now | |||||
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IPD30N06S2L13ATMA4 | 286,932 | 1 |
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Buy Now | ||||||
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IPD30N06S2L13ATMA4 | Cut Tape | 2,475 | 0 Weeks, 1 Days | 1 |
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Buy Now | ||||
Diotec Semiconductor AG DI020N06D1MOSFET DPAK N 60V 0.024OHM 175C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DI020N06D1 | Cut Tape | 3,412 | 1 |
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Buy Now | |||||
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DI020N06D1 | Cut Tape | 4,670 | 5 |
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Buy Now | |||||
Micro Commercial Components MCU90N06A-TPN-CHANNEL MOSFET, DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MCU90N06A-TP | Cut Tape | 2,293 | 1 |
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Goford Semiconductor GT090N06MHMOSFET N-CH 60V 45A 52W 11M(MAX |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT090N06MH | Tape & Reel | 800 | 800 |
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Buy Now | |||||
0N06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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0n06
Abstract: mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE
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0N06L RFP30N06LE, RF1S30N06LESM 0n06 mosfet motor dc 48v RFP30N06LE RF1S30N06LESM RF1S30N06LESM9A TB334 0N06L 1S30N06L F30N06LE | |
0N06L
Abstract: RFP30N06
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RFP30N06LE, RF1S30N06LESM 0N06L RFP30N06 | |
0N06
Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
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RFG70N06, RFP70N06, RF1S70N06SM RFP70 0N06S RFG70N06 O-247 O-220AB 175oC TB334 0N06 RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70 | |
0m02
Abstract: 4G TECHNOLOGY ndi2 F880 IBM3221L0572
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PRS28 IBM3209K4060 IBM3221L0572. 0m02 4G TECHNOLOGY ndi2 F880 IBM3221L0572 | |
RISCwatch
Abstract: ppc jtag
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x0606
Abstract: IBM processor X219 MCI 7801 162024 10E431 SOH-A2 312402
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RS-232, x0606 IBM processor X219 MCI 7801 162024 10E431 SOH-A2 312402 | |
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Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to |
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IBM2520L8767 102Mb/s. 400Mb/s chapt07 | |
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Contextual Info: IBM Processor for Network Resources Version 2.61 Databook Preliminary Copyright and Disclaimer Copyright International Business Machines Corporation 1999, 2000 All Rights Reserved Printed in the United States of America May 2000 The following are trademarks of International Business Machines Corporation in the United States, or other countries, |
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IBM32NPCXXEPABBD66 | |
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Contextual Info: IBM25CPC710AB3A100 IBM Dual Bridge and Memory Controller Features • • • • • • • • • • • • • • Up to 100 MHz PowerPC 60x 64-bit bus Supports 100 MHz SDRAM including PC100 I/O for up to 2 MB 8-bit flash ROM 32-bit 33 MHz/64-bit 33-66 MHz async dual bus |
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IBM25CPC710AB3A100 64-bit PC100 32-bit Hz/64-bit 32x32mm 35jim | |
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Contextual Info: IBM3206K0424 preliminary IBM Processor for Network Resources Features • Supports multiple protocols, including ATM, POS, Frame Relay, and 10/100/Gigabit Ethernet • PCI 32/64-bit interface up to 66MHz. • Configurable for sustained performance through |
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IBM3206K0424 10/100/Gigabit 32/64-bit 66MHz. 155Mb/s 622Mb/s chapt07 | |
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Contextual Info: IBM3209K4060 IBM 28.4G Packet Routing Switch Features • Non-blocking, self-routing, single-stage switch • High Performance: - 100 MHz to 111.1 MHz frequency operation - 1.77 Gb/s throughput per port 16x16 config. - Up to 3.54Gb/s throughput per port (8x8 con |
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IBM3209K4060 16x16 54Gb/s prs28 PL-SC-C56, | |
x0606
Abstract: IBM32NPCXXEPABBF66 4z57 SA 6356 ci 4009 0L12D 30G13 3114 sops lc fp603 X1078
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IBM32NPCXX1EPABBE66
Abstract: IBM processor of relay RAS 0510 DC RISCwatch
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IBM32NPCXX1EPABBD66 IBM32NPCXX1EPABBE66. pnr261appnotes IBM32NPCXX1EPABBE66 IBM processor of relay RAS 0510 DC RISCwatch | |
x0606
Abstract: STS-1100 RISCwatch ppc jtag
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0m02
Abstract: 0B23 0p07 ndi2 F880 IBM3209K4060 0J10 20N07 0H02 0J14
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PRS28 IBM3209K4060 0m02 0B23 0p07 ndi2 F880 0J10 20N07 0H02 0J14 | |
IBM processor
Abstract: RISCwatch IBM powerpc 405 walnut
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PBADDR16 PBADDR17 pnr25 chapt07 IBM3206K0424 IBM processor RISCwatch IBM powerpc 405 walnut | |
0y10
Abstract: 0K-10 0y22 0Y06 0n25 137 0H14
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IBM25CPC710AB3A100 0y10 0K-10 0y22 0Y06 0n25 137 0H14 | |
IBM processor
Abstract: ibm technical IBM3206K0424 RISCwatch SCR Handbook, rca
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PBADDR16 PBADDR17 chapt07 PBADDR16 PBADDR17 IBM3206K0424 IBM3206K0424 IBM processor ibm technical RISCwatch SCR Handbook, rca | |
CRM 1191A
Abstract: of RAS 0510 relay ras 0610 relay PIN CONFIGURATION relay RAS 0510 RISCwatch
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chapt07 IBM2520L8767 CRM 1191A of RAS 0510 relay ras 0610 relay PIN CONFIGURATION relay RAS 0510 RISCwatch | |
IBM ASIC
Abstract: X2701 RISCwatch
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IBM32NPCXXEPABBD66 IBM32NPCXXEPAF66. IBM ASIC X2701 RISCwatch | |
IBM host bridge CPC710
Abstract: 137 0H14 0w08 0Y06 CPC710 timing CPC710
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CPC710-100 -66MHz CPC710 IBM host bridge CPC710 137 0H14 0w08 0Y06 CPC710 timing | |
IBM powerpc 405 walnut
Abstract: RX TSOP 1738 SCR BRX 49 PIN IBM processor IBM3206K0424 65z5 RISCwatch BIOS Flash ROM Chip
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pnr25 chapt07 PBADDR16 PBADDR17 IBM3206K0424 IBM powerpc 405 walnut RX TSOP 1738 SCR BRX 49 PIN IBM processor IBM3206K0424 65z5 RISCwatch BIOS Flash ROM Chip | |
IBM processor
Abstract: 65Z5 IBM2520L8767 93-620R2 CRM 1191A 93-727 BC 247 RISCwatch BIOS chip 0d19
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/apbaddr17 /apbaddr16 IBM2520L8767 chapt07 IBM processor 65Z5 IBM2520L8767 93-620R2 CRM 1191A 93-727 BC 247 RISCwatch BIOS chip 0d19 | |
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Contextual Info: SUP/0N06-14 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary te d V(BR)DSS (V) r DS(on) (t2 ) I d (A) 60 0 .0 1 4 70a v i s TO-220AB o c D Q m ;ta ^ e _ %bi B » TO-263 f-1 DRAIN connected to TAB n g d s Top View G D S i Top View |
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SUP/SUB70N06-14 O-220AB O-263 SUB70N06-14 SUP70N06-14 S-57253â 24-Feb-98 | |