2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2n37132n37142n37152n3716+162n37892n37902n37912n37922n43402n4340s2sk 150amg100g1al22sd13652sc2461 b2sk302sc102c366gb1375mg15g1al21265n
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C3182N
Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn
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2sa512sa572sc32812sd1571+10c3182nc3888a2sd 34202sc22682sc2073-2ep 14083884a3182n2sd 388a2sa855
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Contextual Info: KIS DRAMI HO IS UNPUBLISHED. ftEVtSICIWS c REDRAWN I SUPSD-i P6ft EC 0020-962-93 * A P .C . A, 0, C, D. BOARD RECOMMENDATIONS. HOLES SHOULD BE D R IL LE D WITH A 1 -1 5 mm D R I L L . MINIMUM P . C . B , T IN /L E A D PL A T IN G TO BE 7.S2p;m C .0 0 0 3 0 0 ] THK
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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i815/ktn10i5/ktp1923/ktn380tm/ktn+5germaniumkia 7208kia 7313germanium transistorspeaker protector
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75fAmax
Abstract: ADS24
Contextual Info: A N A LO G D E V IC E S FEATURES Ultralow Bias Current: Low Low Low Low Monolithic Precision, Low Power FET-lnput Electrometer Op Amp AD515A* PIN CONFIGURATION 75fA max AD515AL 1SOfA max (AD515AK) 300fA max (AD515AJ) Power: 1.5mA max Quiescent Current (0.6mA typ)
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ad515aad515alad515ak300fa+3ad515aj75famaxads24
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Contextual Info: 1234 151 E8E9BB8 1AF*8D7E 5+5'*)87,EDB8 151
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12345678957a8bcde8bf5f7fb57a5d59edf597ac5e+287ac5e85eaf5
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Contextual Info: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes
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rfg60p05eta098350-030i2 |
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kta 6213
Abstract: KTD716 2236A KTD526
Contextual Info: ü POW ER TRAN SISTO R TYPE VCEO V Co v CE(sat) VCE (V) (mA) (mA) (V) *C (mA) -0.3 k: lB (mA) (MHz) Typ (MIN) VCE *C (mA) (V) fT MAX Cob (pF) Typ (Max) VCB (V) (MHz) PACKAGE 400 125 -0.1 -5 0 70 -4 0 0 -6 -2 -1 0 0 -1 0 (80) -1 0 -1 150 400 125 0.1 60 70-700
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1015/ktp55141815/ktn5014562tm/ktp1959/ktn5013+5950/ktp5512kta 6213ktd7162236aktd526
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SR 2873 diode
Abstract: 741 QUAD op27 ad711 9436A
Contextual Info: Selection Trees — Operational Amplifiers t Selection Trees — Operational Amplifiers OPERATIONAL AM PLIFIERS OP482 AD546 1 pA AD549 (60 fA) OPERATIONAL AMPLIFIERS AD840 (400 V/|is) AD841 (200 V/jis) AD842 (300 V/(is) AD846 (350 V/ns) 9-5 CD OP467 9-6
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op482ad546ad549ad840+11ad841ad842ad846op467op113op213sr 2873 diode741 quadop27ad7119436a
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ADS49J
Abstract: AD649J AD549
Contextual Info: ANALOG DEVICES □ Ultralow Input Bias Current Operational Amplifier AD549* FEATURES Ultralow Bias Current: 60 fA max AD549L 250 fA max (AD549J) Input Bias Currant Guaranteed Over Common-Mode Voltage Range Low Offset Voltage: 0.25 inV max (AD549K) 1.00 mV max (AD649J)
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ad549ad549lad549jad549k+3ad649jads49jmil-std-883b
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schematic diagram Power supply 500w
Abstract: schematic diagram 230VAC to 5VDC POWER SUPPLY R30IB "electronic measurements inc" hcr ADAPTER circuit AC TO DC 220V TO 6V in4740a R30iA wiring diagram prepaid energy meter program flow chart Automatic Load Sharing between Two or More Transf 220V DC regulated power supply
Contextual Info: INSTRUCTION MANUAL F0 R NCR POWER SUPPLY MODEL SERIAL NO. 201 922-9300 ELECTRONIC MEASUREMENTS INC. 405 ESSEX ROAD, NEPTUNE, N.J. 07753 FIVE-YEAR WARRANTY Electronic Measurements, Inc. warrants this equipment manufactured by us and sold by us or our authorized agents to a manufacturer or
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20-047-xxx1qs46schematic diagram power supply 500wschematic diagram 230vac to 5vdc power supply+8r30ibelectronic measurements inc" hcradapter circuit ac to dc 220v to 6vin4740ar30ia wiring diagramprepaid energy meter program flow chartautomatic load sharing between two or more transf220v dc regulated power supply
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B744 transistor
Abstract: circuit diagram for sma 4038 b744 RJ 000002 BF 3027 HP 2231 PCM51JG V PCM51JG-V 80046 BB 9852
Contextual Info: B U R R - B R O W H N PCM51JG i D ESIG NED FOR A U D IO H ci c. 16-Bit ° /A DIGITAL-TO-ANALOG CONVERTER -ft i_ f *v" FEATURES DESCRIPTION • 16-BIT RESOLUTION T h e P C M 5 1 is d e s i g n e d f o r P C M a u d i o a p p l i c a t i o n s a n d is c o m p a t i b l e w i t h E I A J S T C - 0 0 7 s p e c i f i c a t i o n s .
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pcm51jg16-bit350nsec-15db+14stc-007dac71pcm50pcm51b744 transistorcircuit diagram for sma 4038b744rj 000002bf 3027hp 2231pcm51jg vpcm51jg-v80046bb 9852
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dell circuit diagram
Abstract: 65536
Contextual Info: HM101504F-10/12 — Preliminary 65536-W ords x 4-Bit Fully Decoded Random Access Memory • PIN ARRANGEMENT ■ DESCRIPTION □ 1 32 The HM101504 is ECL 100K com patible, 65536-words by 4-bits read/write random access m em ory developed for high speed sys
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hm101504f-10/125536-whm10150465536-words+410/12ns500mwdell circuit diagram65536
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mini inverter circuit schematic diagram of AD 549
Abstract: Styrene capacitor 7404 ls
Contextual Info: ANALOG DEVICES □ FEATURES Ultralow Bias Current: 60 fA max AD549L 250 fA max (AD549J) Input Bias Current Guaranteed Over Common-Mode Voltage Range Low Offset Voltage: 0.25 mV max (AD549K) 1.00 mV max (AD549J) Low Offset Drift: 5 f*V/°C max (AD549K) 20 *jlV/°C max (AD549J)
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ad549ad549lad549jad549k+5mil-std-883bad590mini inverter circuit schematic diagram of ad 549styrene capacitor7404 ls
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Contextual Info: 1234 151 54 !"#4$%4&5!'#BD7B5D59EDF567897AC5E 7E87A E8E9BB8 1AF 8D7E(5*5&)(87+EDB8 151 4 !"#4$%4&5!'#BD7B5D59EDF567897AC5E(7E87A
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12345678957a8bcde8bf5f7fb57a5d59edf597ac5e+287ac5-e85eaf5
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Contextual Info: 1234 1 4 !"4#$4%5 &"BD7B5D59EDF567897AC5E'7E87A5 5855! E8E59BB8 1AF(8D7E'5$6BD5 A8D' 1 4 !"4#$4%5 &D7B5E85"BD7B
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12345678957a8bcde8bf5f7fb57a5d59edf597ac5e+487ac55eaf52dd597ac5bde87ac5deacb5
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F1S70N06
Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
Contextual Info: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model
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rfg70n06rfp70n06rf1s70n06rf1s70n06sm+13014i223e-329e-349e-750e-784e-9f1s70n0670n061s70n06fp70n10i5rf1s70nfp70n06
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c557b
Abstract: 125a5 ED81A
Contextual Info: 1234 151 ! E8E9BB8 1AF+8D7E*5,5 +*87-EDB8 151
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transistor KTA 949
Abstract: KTC2229 2SC 2229 transistor KTN5013 2238B transistor B 1184 transistor HFE 400 1w to 92 TO92C
Contextual Info: 2 DRIVER TRANSISTOR USE TYPE v CEO V * PC (mA) (mW) ELECTRICAL CHARACTERISTICS (Ta = 25C) T. Co ICBO (uA) «AX *E VCB (V) (mA) hFE VCE (sat) VCE (V) k: (mA) (V) *C (mA) (MHz) TYP (MIN) VCE k (V) (mA) -10 4.0 -10 I TO-92L fT MAX *B (mA) Cob. (pF) TYP (MAX)
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949/ktpo-92l2229/ktn1015/ktp5514+111815/ktno-126o-220transistor kta 949ktc22292sc 2229 transistorktn50132238btransistor b 1184transistor hfe 400 1w to 92to92c
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70n06 to 247
Abstract: RFP70N06 70n06
Contextual Info: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB
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rfg70n06rfp70n06rf1s70n06smta49007+3an726070n06 to 24770n06
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