65536 Search Results

28F512A

Abstract: 28F512A-12
Contextual Info: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12

datasheet CI 556

Abstract: W24512A W24512A-25 W24512AJ-25 W24512AS-25 W24512AT-25
Contextual Info: W24512A 64K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

SMD-5962-89696

Contextual Info: Tem ic Semiconductors 64 K x 1 High Speed CMOS SRAM HM 65787 Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using

W24512A

Abstract: W24512A-35 W24512AS-35 W24512AT-35
Contextual Info: W24512A 64K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

f11u

Abstract: FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055
Contextual Info: Ordering number : EN5055 _ CMOS LSI No. 5055 LC382161T-17 IS ipîppi; 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM J 8¡|lí¡Bí: 1 Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

SN74V273

Abstract: SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP
Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695 – JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

sop-40 16-bit

Abstract: LC321664AJ LC321664AM SOJ40 MIFA ao3476
Contextual Info: Ordering number : EN 4795A CMOS LSI No LC321664AJ, AM-80 4795A S A \Y O 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a

Contextual Info: 23/06/2014 www.crouzet.com Programmable touch panels MTP6/50 & MTP8/50 PA Part number 88970502 MTP6/50 & MTP8/50 4.3''TFT-LCD compact resistive touch panels, 65536 colors, LED backlight Graphical resolution : 480 x 272 pixels Wide viewing angle : 70° horizontally and vertically

27pc512-2

Abstract: 27PC512-20 TMS27C512
Contextual Info: TMS27C512 65536 BY frBITUV ERASABLE TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS812G - NOVEMBER 1985 - REVISED SEPTEMBER 1997 • Organization. . . 65 536 by 8 Bits J PACKAGE • Single 5-V Power Supply TO P VIEW • Pin Compatible With Existing 512K MOS

101490

Contextual Info: HM101490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

Contextual Info: HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word X 4-Bit High Speed CM O S Static RAM The Hitachi HM 6208 and HM 6208H are high speed 256k static R A M S organized as 64k-word x 4 bit. They realize high speed a cc e ss time 25/35/45 ns and low power consum ption, em ploying

A02H2

Abstract: EZ23 LC321664AT LC321664AT-80 TSOP44 7w7b A021-46
Contextual Info: Ordering number : EN % 4942 j _ CMOS LSI LC321664AT-80 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a

33166

Abstract: free transistor and ic equivalent data 4712 LC331664M LC331664ML
Contextual Info: [Ordering number : EN $*$4712 CMOS LSI LC331664M, ML-70/80/10 i SA\YO 1 MEG 65536 words x 16 bits Pseudo-SRAM j Preliminary "V Overview Package Dimensions The LC331664 scries is composed of pseudo static RAM thal operate on a single 5 V power supply and arc

Contextual Info: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for

TFT MOBILE DISPLAY I2C interface

Abstract: eDIPTFT43-ATP 480x272 touch lcd digital eDIPTFT32-ATP
Contextual Info: * * * * * * * No Controller Board required ! RS-232 + I²C Bus + SPI Character Set & Graphic Functions 3.2" and 4.3" / 65536 colors Single Supply +5V 3.2" also +3.3V Incl. Touch Panel Controller TOp. -20.+70°C 3.2" EA eDIPTFT32-ATP 4.3" EA eDIPTFT43-ATP

100490

Contextual Info: FU JIT S U ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100490-15 MBM100490-25 J u ly 1 9 8 7 E d tio n 1 .0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100490 is fu lly decoded 6 5536-bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage applications. This device is organized as 65536 words b y one b it, and it features

Contextual Info: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword X 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing

Contextual Info: FUJITSU ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10490-1 5 MBM10490-25 July 1967 Edition 3.0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10490 is fu lly decoded 055 3 6 -bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage a pp li­

Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith

Contextual Info: HM62W864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-281B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62W864 is a CMOS static RAM organized 64-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. It

AX 1668 F 24 pin

Contextual Info: SMJ27C512 65536 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS019D - SEPTEMBER 1987 - REVISED OCTOBER 1997 Organization . . . 65536 by 8 Bits J PACKAG E High-Reiiabiiity MIL-PRF-38535 Processing T O P V IE W Single 5-V Power Supply A15[ Pin-Compatible With Existing 512K