EHD07 Search Results

Contextual Info: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration

BAT62

Abstract: BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 D 1 D 2 2 4 5 D 2 D 1 1 BAT62-07W BAT62-07L4 1 2 3 ESD Electrostatic discharge sensitive device, observe handling precaution!

BA892-02V

Abstract: SC79
Contextual Info: BA892-02V Silicon Rf Switching Diode
For band switching in TV / VTR 2 tuners up to 2GHz
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892-02V AA 1=C SC79 2=A Maximum Ratings Parameter Symbol

BA595

Abstract: BA885 BA895 BAR63-02W BAR63-03W BCW66 SC79 SCD80
Contextual Info: BA595/BA885/BA895. Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics BA595 BA895 BA885 !  

BB804

Abstract: BCW66
Contextual Info: BB804. Silicon Variable Capacitance Diode • For FM tuners • Monolithic chip with common cathode for perfect tracking of both diodes • Uniform "square law" characteristics • Ideal HiFi tuning device when used in low-distortion, back-to-back configuration

BAR64

Abstract: bar SOT-23
Contextual Info: BAR 64 . Silicon PIN Diodes 3 • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime 2 • For frequencies up to 3 GHz 1 BAR 64 BAR 64-04 BAR 64-05 1 3

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

BBY51-03W

Contextual Info: BBY51-03W Silicon Tuning Diode 2
High Q hyperabrupt tuning diode 1
Designed for low tuning voltage operation
For VCO's in mobile communications equipment VPS05176 Type Marking Pin Configuration Package BBY51-03W H 1=C SOD323 2=A Maximum Ratings Parameter

SOT143 DUAL DIODE

Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
Contextual Info: BAT15-099 Silicon Dual Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration

BAS40-04W

Abstract: BAS40-05W BAS40-06W VSO05561
Contextual Info: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection 2
Voltage clamping
High-level detecting and mixing BAS40-04W 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 EHA07005 VSO05561 2 1 2 EHA07006 EHA07004

bat18 a2

Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s

BB640

Contextual Info: BB640 Silicon Variable Capacitance Diode 2
For Hyperband TV / VTR tuners, Bd I 1 VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB640 red S 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage R
5k

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

VES05991

Abstract: BA892 SCD80
Contextual Info: BA892 Silicon Rf Switching Diode
For band switching in TV / VTR 2 tuners up to 2GHz
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892 A 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

CT 1975

Abstract: BB814 SH1 BB814 marking code 2A2 top marking c2 sot23 diode MARKING A1 1A1 C2 marking SH2
Contextual Info: BB814 Silicon Variable Capacitance Diode 3
For FM radio tuners with extended frequency band
High tuning ratio at low supply voltage car radio
Monolithic chip (common cathode) for perfect dual diode tracking 2
Coded capacitance groups and group matching

BAT68-07W

Contextual Info: BAT68-07W Silicon Schottky Diodes 3
For mixer applications in the VHF / UHF range 4
For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s

s3s sot23

Abstract: BBY51
Contextual Info: BBY51 Silicon Tuning Diode 3
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings

BAT15-05W

Abstract: VSO05561 noise diode
Contextual Info: BAT15-05W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W

BAT68-04W

Abstract: BAT68-05W BAT68-06W BAT68W VSO05561
Contextual Info: BAT68W Silicon Schottky Diodes
For mixer applications in the VHF / UHF range 3
For high-speed switching applications 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution!

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

ts101

Contextual Info: BAS 140W Silicon Schottky Diode 2 • General-purpose diode for high-speed switching 1 • Circuit protection • Voltage clamping • High-level detecting and mixing VPS05176 Type Marking Pin Configuration Package BAS 140W 4 1=C SOD-323 2=A Maximum Ratings

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

2a2 SOT-23

Abstract: marking code BB bb814
Contextual Info: BB 814 Silicon Variable Capacitance Diode 3 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking 2 • Coded capacitance groups and group matching

592 diode

Abstract: BA592
Contextual Info: BA 592 Silicon RF Switching Diode 2 • For VHF band switching in TV / VTR tuners 1 • Low forward resistance, small capacitance small inductance VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BA 592 blue S 1=C SOD-323 2=A Maximum Ratings Parameter