DIODE SS34 Search Results

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

1SS349

Contextual Info: TOSHIBA 1SS349 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS349 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • + 0.5 2.5-0.3 + 0.25 1.5-0.15 . Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/¿A (Max.) Small Package

1SS348

Contextual Info: TOSHIBA 1SS348 TOSHIBA DIODE 1 SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59 + 0.25

Contextual Info: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package

1SS344

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)

Contextual Info: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time

br 123 s

Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

GRM55DR61H106KA88L

Abstract: SS34A vj0805y104kxamt B340A CRCW08053011FRT1 CRCW08059760FRT1 MIC4682 MIC4682BM
Contextual Info: MIC4682 Evaluation Board Micrel, Inc. MIC4682 Evaluation Board Programmable Current Limit SOP-8 SuperSwitcher 4V to 34V Input / 200kHz is forward biased. During this portion of the cycle, current flows through the diode, inductor and load. Figure 2 shows

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

LL5817

Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Contextual Info: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

Contextual Info: SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 100A Peak

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

593D106X0050

Abstract: VJ0805Y104KXAMT B340A CRCW08053011FRT1 CRCW08059760FRT1 MIC4682 MIC4682BM SS34A
Contextual Info: MIC4682 Evaluation Board Micrel MIC4682 Evaluation Board Programmable Current Limit SOP-8 SuperSwitcher 4V to 34V Input / 200kHz is forward biased. During this portion of the cycle, current flows through the diode, inductor and load. Figure 2 shows the 5V output efficiency versus input voltage and continuous

transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Contextual Info: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also

SS340

Abstract: AP1609S AP1609
Contextual Info: AP1609 PWM/PFM DUAL MODE STEP-UP DC/DC CONVERTER General Description Features • • • • • • • • • The AP1609 is a high efficient step-up DC/DC converter. Large output current is possible having a built in internal N channel MOSFET, and using an external coil and diode.

SS340

Abstract: PFM Step-up DC/DC Converter ZD5V Step-up 12V AP1609 AP1609SL-13
Contextual Info: AP1609 PWM/PFM DUAL MODE STEP-UP DC/DC CONVERTER General Description Features • • • • • • • • • • The AP1609 is a high efficient step-up DC/DC converter. Large output current is possible having a built in internal N channel MOSFET, and using an external coil and diode.

Contextual Info: AP1609 PWM/PFM DUAL MODE STEP-UP DC/DC CONVERTER General Description Features • • • • • • • • • • The AP1609 is a high efficient step-up DC/DC converter. Large output current is possible having a built in internal N channel MOSFET, and using an external coil and diode.