1SS349 Search Results

TOSHIBA "ULTRA HIGH SPEED" DIODE

Abstract: ifm 3000 1SS349 SCHOTTKY diode
Contextual Info: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.49V (typ.) Low reverse current : IR = 50µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package

Contextual Info: Product specification 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Low voltage current: :IR = 50 1 A Max . 0.55 Low forward voltage: VF3 = 0.49V(Typ). +0.1 1.3-0.1 +0.1 2.4-0.1 Small package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

Contextual Info: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)

maxim package marking

Abstract: Rm25 1SS349
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.49V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage current: :IR = 50 0.55

1SS349

Contextual Info: TOSHIBA 1SS349 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS349 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • + 0.5 2.5-0.3 + 0.25 1.5-0.15 . Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/¿A (Max.) Small Package

MARKING toshiba

Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS General Semiconductor diode marking 49 TOSHIBA DIODE 1SS349 TD236
Contextual Info: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm Low forward voltage : VF 3 = 0.49V (typ.) Low reverse current : IR = 50µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Low voltage current: :IR = 50 1 A Max . 0.55 Low forward voltage: VF3 = 0.49V(Typ). +0.1 1.3-0.1 +0.1 2.4-0.1 Small package 0.4 3 2 +0.1 0.95-0.1 +0.1

1SS349

Contextual Info: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.49V (typ.) z Low reverse current : IR = 50 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)

1SS349

Abstract: 1SS349 SCHOTTKY diode ifm 3000
Contextual Info: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.49V (typ.) l Low reverse current : IR = 50µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.49V (typ.) l Low reverse current : IR = 50µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°C)

1SS349

Contextual Info: 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.49V (typ.) z Low reverse current : IR = 50 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

bmdc

Abstract: 93P3976 KENAI32 qm77 SMDC075 TOKYO-3 PLANAR kt 501 1608B A04 SOT23 R5C554
Contextual Info: A B C D E F G H J K L M N DATE 05/13/03 05/27/03 9 TOKYO-2 PLANAR W/TOKYO-3 RAW CARD 8 7 6 5 4 3 2 1 41. 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 54. 55. 56. 57. 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. 70. 71. 72. 73. 74. 75. 76. 77. 78. 79.

RPACK4

Abstract: 81C61 RPACK4-22 tb6808f CA0036 SMDC075 TC7WB126FK z3M 80s G5 A 01 144C R8551
Contextual Info: A B C D E F G H J K L M N DATE EC NO. P _ OCT/02/01 VER 0.86 9 Q PART NO. 9 DEVELOPMENT NO. TORONTO-4.5 PLANAR VER 0.86 8 7 6 5 4 3 2 1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31.