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    TD236 Search Results

    TD236 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TD236
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 101.91KB 1
    TD236
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 44.96KB 1
    TD236
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 161.76KB 1
    TD236
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 151.96KB 1
    SF Impression Pixel

    TD236 Price and Stock

    Samtec Inc

    Samtec Inc MTSW-105-23-T-D-236

    - Bulk (Alt: MTSW-105-23-T-D-236)
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    Avnet Americas MTSW-105-23-T-D-236 Bulk 1 Weeks 1
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    Newark MTSW-105-23-T-D-236 Bulk 1,587 1
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    Powell Electronics MTSW-105-23-T-D-236 1,047 1
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    Samtec Inc DW-02-17-T-D-236

    Board Stackers & Spacers, Pin Header, 5.99 mm, 4 Contacts, Solder, 2 Rows, 2.54 mm, DW Series - Bulk (Alt: DW-02-17-T-D-236)
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    Newark DW-02-17-T-D-236 Bulk 1,329 1
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    Powell Electronics DW-02-17-T-D-236 877 1
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    Samtec Inc MTMM-105-07-T-D-236

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    Newark MTMM-105-07-T-D-236 Bulk 823 1
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    Powell Electronics MTMM-105-07-T-D-236 543 1
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    Samtec Inc MTMM-106-04-T-D-236

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    Avnet Americas MTMM-106-04-T-D-236 Bulk 1 Weeks 1
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    Newark MTMM-106-04-T-D-236 Bulk 673 1
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    Powell Electronics MTMM-106-04-T-D-236 444 1
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    Samtec Inc MTSW-113-07-T-D-236

    Pin Header, Board-to-Board, 2 Rows, 26 Contacts, Through Hole, MTSW Series, Unshrouded, Straight - Bulk (Alt: MTSW-113-07-T-D-236)
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    Newark MTSW-113-07-T-D-236 Bulk 533 1
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    Sager MTSW-113-07-T-D-236 533 1
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    Powell Electronics MTSW-113-07-T-D-236 352 1
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    Master Electronics MTSW-113-07-T-D-236
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    TD236 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TD236

    Contextual Info: NOTES: 1, D&E DD NOT INCLUDE MOLD FLASH, 2, MOLD FLASH DR PROTRUSIONS NEIT TD EXCEED ,15mm .006" , 3, CONTROLLING DIMENSION: MILLIMETERS, 4, MEETS JED EC TD236, INCHES MIN 0,031 0,001 0,014 MAX 0,047 0,005 0,022 MIN 0,787 0,025 0,356 MAX 1,194 0,127 0,559


    OCR Scan
    td236 PDF

    S5 100 B112 MT RELAY

    Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
    Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless


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    sa-nccb51s5 100 b112 mt relayck 66 ul 94v-0 lcdsh 0357 94v-0+7c225tf8212panduit standoffrf based remote control robotcircuit diagram of incubatord1148burndy y35 crimping tool manual PDF

    TD236

    Abstract: 1SS336
    Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.)


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    1ss336sc-59td-236modtd236 PDF

    1SS336

    Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.)


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    1ss336sc-59 PDF

    1SS336

    Abstract: td236
    Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.)


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    1ss336sc-59td236 PDF

    1SS337

    Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.88V (typ.) z Fast reverse recovery time : trr = 6ns (typ.) z Small total capacitance : CT = 1.6pF (typ.)


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    1ss337sc-59 PDF

    nec k 813

    Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


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    ne33284ane33284a-slne33284a-t1ne33284a-t1a+4nec k 813s11 diode shottkyiei1207ne33284as PDF

    s-mini

    Abstract: SMini
    Contextual Info: S -M IN I-2 -3 F 1 A U n iti nn I ft JEDECII'K E I A J □~ K mm$ ftâ Ic S—MINI TD-236MDD SC-59 2-3F1A - A u g .2000


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    td-236mddsc-592000s-mini-2-3f1as-mini+1smini PDF

    1SS348

    Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


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    1ss348sc-59td-236mod PDF

    Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


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    1ss348sc-59td-236mod100ma PDF

    1SS344

    Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)


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    1ss344961001eaa2 PDF

    1SS337

    Abstract: 88 diode toshiba
    Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)


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    1ss337sc-59td-236modtransportation88 diode toshiba PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565 PDF

    Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)


    Original
    1ss337sc-59961001eaa2 PDF

    Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


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    1ss344td-236modsc-59100ma+1500ma PDF

    Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)


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    1ss337sc-59td-236mod100ma+1200ma PDF

    1SS344

    Abstract: TD236
    Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


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    1ss344td236 PDF

    1SS348

    Abstract: TD236
    Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


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    1ss348sc-59td-236modtd236 PDF

    Zener sot marking 162

    Abstract: marking 8D SOT 89 marking 81t marking 81J
    Contextual Info: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232


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    300mwmmbz5225mmbzs267td-236ab+5ot-23zener sot marking 162marking 8d sot 89marking 81tmarking 81j PDF

    1SS348

    Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original
    1ss348sc-59td-236mod PDF

    1SS344

    Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max)


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    1ss344 PDF

    1SS344

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max)


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    1ss344toshiba "ultra high speed" diode PDF

    1SS337

    Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)


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    1ss337sc-59 PDF