TD236 Search Results
TD236 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TD236 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 101.91KB | 1 | ||
| TD236 | Unknown | Basic Transistor and Cross Reference Specification | Scan | 44.96KB | 1 | ||
| TD236 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 161.76KB | 1 | ||
| TD236 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 151.96KB | 1 |
TD236 Price and Stock
Samtec Inc MTSW-105-23-T-D-236- Bulk (Alt: MTSW-105-23-T-D-236) |
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MTSW-105-23-T-D-236 | Bulk | 1 Weeks | 1 |
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MTSW-105-23-T-D-236 | Bulk | 1,587 | 1 |
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MTSW-105-23-T-D-236 | 1,047 | 1 |
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Samtec Inc DW-02-17-T-D-236Board Stackers & Spacers, Pin Header, 5.99 mm, 4 Contacts, Solder, 2 Rows, 2.54 mm, DW Series - Bulk (Alt: DW-02-17-T-D-236) |
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DW-02-17-T-D-236 | Bulk | 1 Weeks | 1 |
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DW-02-17-T-D-236 | Bulk | 1,329 | 1 |
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DW-02-17-T-D-236 | 877 | 1 |
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Samtec Inc MTMM-105-07-T-D-236- Bulk (Alt: MTMM-105-07-T-D-236) |
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MTMM-105-07-T-D-236 | Bulk | 1 Weeks | 1 |
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MTMM-105-07-T-D-236 | Bulk | 823 | 1 |
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MTMM-105-07-T-D-236 | 543 | 1 |
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Samtec Inc MTMM-106-04-T-D-236- Bulk (Alt: MTMM-106-04-T-D-236) |
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MTMM-106-04-T-D-236 | Bulk | 1 Weeks | 1 |
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MTMM-106-04-T-D-236 | Bulk | 673 | 1 |
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MTMM-106-04-T-D-236 | 444 | 1 |
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Samtec Inc MTSW-113-07-T-D-236Pin Header, Board-to-Board, 2 Rows, 26 Contacts, Through Hole, MTSW Series, Unshrouded, Straight - Bulk (Alt: MTSW-113-07-T-D-236) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTSW-113-07-T-D-236 | Bulk | 1 Weeks | 1 |
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MTSW-113-07-T-D-236 | Bulk | 533 | 1 |
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MTSW-113-07-T-D-236 | 533 | 1 |
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MTSW-113-07-T-D-236 | 352 | 1 |
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MTSW-113-07-T-D-236 |
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TD236 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TD236Contextual Info: NOTES: 1, D&E DD NOT INCLUDE MOLD FLASH, 2, MOLD FLASH DR PROTRUSIONS NEIT TD EXCEED ,15mm .006" , 3, CONTROLLING DIMENSION: MILLIMETERS, 4, MEETS JED EC TD236, INCHES MIN 0,031 0,001 0,014 MAX 0,047 0,005 0,022 MIN 0,787 0,025 0,356 MAX 1,194 0,127 0,559 |
OCR Scan |
td236 | |
S5 100 B112 MT RELAY
Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
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sa-nccb51s5 100 b112 mt relayck 66 ul 94v-0 lcdsh 0357 94v-0+7 | |
TD236
Abstract: 1SS336
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1ss336sc-59td-236modtd236 | |
1SS336Contextual Info: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.) |
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1ss336sc-59 | |
1SS336
Abstract: td236
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1ss336sc-59td236 | |
1SS337Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.88V (typ.) z Fast reverse recovery time : trr = 6ns (typ.) z Small total capacitance : CT = 1.6pF (typ.) |
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1ss337sc-59 | |
nec k 813
Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
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ne33284ane33284a-slne33284a-t1ne33284a-t1a+4 | |
s-mini
Abstract: SMini
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OCR Scan |
td-236mddsc-592000s-mini-2-3f1as-mini+1 | |
1SS348Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic |
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1ss348sc-59td-236mod | |
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Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic |
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1ss348sc-59td-236mod100ma | |
1SS344Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C) |
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1ss344961001eaa2 | |
1SS337
Abstract: 88 diode toshiba
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1ss337sc-59td-236modtransportation88 diode toshiba | |
aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
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11ta0a12a025aa0290u0u55+16 | |
E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
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ls422ls423ls424ls425+15 | |
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Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.) |
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1ss337sc-59961001eaa2 | |
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Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max) |
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1ss344td-236modsc-59100ma+1 | |
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Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.) |
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1ss337sc-59td-236mod100ma+1 | |
1SS344
Abstract: TD236
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1ss344td236 | |
1SS348
Abstract: TD236
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1ss348sc-59td-236modtd236 | |
Zener sot marking 162
Abstract: marking 8D SOT 89 marking 81t marking 81J
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OCR Scan |
300mwmmbz5225mmbzs267td-236ab+5 | |
1SS348Contextual Info: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.56V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) |
Original |
1ss348sc-59td-236mod | |
1SS344Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max) |
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1ss344 | |
1SS344
Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
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1ss344toshiba "ultra high speed" diode | |
1SS337Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.) |
Original |
1ss337sc-59 | |