1SS337 Search Results

1SS337

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF 3 = 0.88V (typ.) z Fast reverse recovery time : trr = 6ns (typ.) z Small total capacitance : CT = 1.6pF (typ.)

1SS337

Contextual Info: 1SS337 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS337 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順電圧特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm

1SS337 J9

Contextual Info: 1SS337 T O SH IB A 1SS337 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. . • • • + 0 .5 2 .5 - 0 . 3 Small Package : SC-59 Low Forward Voltage : Vp 3 = 0.88V (Typ.) Fast Reverse Recovery Time : trr = 6ns (Typ.)

1SS337

Abstract: 88 diode toshiba
Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)

1SS337

Contextual Info: TOSHIBA 1SS337 1 SS337 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • +0.5 2.5-0.3 Small Package : SC-59 Low Forward Voltage : Vjr 3 = 0.88V (Typ.) Fast Reverse RecoveryTime : trr = 6ns (Typ.)

Contextual Info: TOSHIBA 1SS337 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 3 7 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0,5 2 .5 - 0.3 + 0.25 • Small Package : SC-59 • Low Forward Voltage : Vf 3 = 0.88V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capaçitançç

1SS337 J9

Contextual Info: 1SS337 T O SH IB A 1SS337 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. . • • • + 0 .5 2 .5 - 0 . 3 Small Package : SC-59 Low Forward Voltage : Vp 3 = 0.88V (Typ.) Fast Reverse Recovery Time : trr = 6ns (Typ.)

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF 3 = 0.88V (typ.) Fast reverse recovery time : trr = 6ns (typ.) Small total capacitance : CT = 1.6pF (typ.)

1SS337 J9

Abstract: sot-23 package marking J9 marking j9 sot-23 marking j9 "marking j9" 1SS337
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS337 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF3 = 0.88V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast reverse recovery time: trr = 6ns(Typ).

1SS337

Abstract: SC-59 marking 1F
Contextual Info: 1SS337 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. . Small P ackage . Low Forward Voltage . Fast Re v e r s e RecoveryTime . U n i t in m m + 0-5 25-0.3 + 0.25 1.5-0.15, : SC-59 : V p = 0 .8 8 V T y p . : Small Total Capacitance

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)

Contextual Info: Product specification 1SS337 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF3 = 0.88V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast reverse recovery time: trr = 6ns(Typ). +0.05 0.1-0.01 0-0.1 +0.1 0.97-0.1

1SS337

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF 3 = 0.88V (typ.) l Fast reverse recovery time : trr = 6ns (typ.) l Small total capacitance : CT = 1.6pF (typ.)

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications Unit: mm z Small package: SC-59 z Low forward voltage: VF 3 = 0.88 V (typ.) z Fast reverse recovery time: trr = 6 ns (typ.) z Small total capacitance: CT = 1.6 pF (typ.)

1SS337

Contextual Info: 1SS337 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications Unit: mm z Small package: SC-59 z Low forward voltage: VF 3 = 0.88 V (typ.) z Fast reverse recovery time: trr = 6 ns (typ.) z Small total capacitance: CT = 1.6 pF (typ.)

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入