1SS344 Search Results
1SS344 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 1SS344 | Kexin | Ultra High Speed Switching Application | Original | 32.41KB | 1 | ||
| 1SS344 | Toshiba | Diode - Silicon Epitaxial Schottky Planar Type | Original | 131.19KB | 3 | ||
| 1SS344 | TY Semiconductor | Ultra High Speed Switching Application - SOT-23 | Original | 57.81KB | 1 | ||
| 1SS344 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 80.43KB | 1 | ||
| 1SS344 | Toshiba | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | Scan | 113.75KB | 2 | ||
| 1SS344 | Toshiba | DIODE | Scan | 113.76KB | 2 |
1SS344 Price and Stock
Toshiba America Electronic Components 1SS344(TE85L) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS344(TE85L) | 213 |
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Toshiba America Electronic Components 1SS344(TE85L,F)IN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS344(TE85L,F) | 310 |
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Toshiba America Electronic Components 1SS344(TE85LF)IN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS344(TE85LF) | 7 |
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1SS344 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.) |
OCR Scan |
1ss344961001eaa2 | |
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Contextual Info: Product specification 1SS344 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Fast reverse recovery time: trr = 20ns Typ . 0.55 Low forward voltage: VF(3) = 0.50V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 |
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1ss344ot-23 | |
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Contextual Info: TO SHIBA 1SS344 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. U nit in mm + 0.5 2 . 5 - 0 .3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • |
OCR Scan |
1ss344 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS344 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching MARKING: H9 |
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ot-231ss344 | |
1SS344Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.) |
OCR Scan |
1ss344961001eaa2 | |
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Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.) |
OCR Scan |
1ss3441500s34461001ea | |
1SS344Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C) |
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1ss344961001eaa2 | |
H9 MARKING CODE SOT23
Abstract: H9 sot 23 MARKING H9 h9 marking h9 sot23
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1ss344ot-23100ma500ma+6 | |
smd transistor h9
Abstract: smd diode h9 H9 sot 23 MARKING H9 transistor h9 Rm25 1SS344 h9 MARKING
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1ss344ot-23smd transistor h9smd diode h9+5 | |
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Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application l Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) l Fast reverse recovery time : trr = 20ns (typ.) l High average forward current : IO = 0.5A (max) |
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1ss344td-236modsc-59100ma+1 | |
1SS344
Abstract: TD236
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1ss344td236 | |
1SS344Contextual Info: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application z Low forward voltage Unit: mm : VF 3 = 0.50V (typ.) z Fast reverse recovery time : trr = 20ns (typ.) z High average forward current : IO = 0.5A (max) |
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1ss344 | |
1SS344Contextual Info: 1SS344 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm . Low Forward Voltage Vp= 0 .50V Typ. . Fast Reverse Recovery Time trr=20ns(Typ.) . High Average Forward Current IO=0.5A(Max.) +0.5 2.5 -0 .3 + 0.25 1.5-0.1 5, |
OCR Scan |
1ss344100ma500ma | |
1SS344
Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
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1ss344toshiba "ultra high speed" diode | |
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Contextual Info: 1SS344 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability |
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1ss344ot-23mil-std-202 | |
TOSHIBA "ULTRA HIGH SPEED" DIODE
Abstract: 1SS344 TD236
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1ss344toshiba "ultra high speed" diodetd236 | |
1S1585
Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
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OCR Scan |
ot-23modot-143mod1s1585107yp+9 | |
2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
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OCR Scan |
2n39032n39042n39052n3906+16 | |
SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
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scj0004ntpc6k01hmg01crg02+14 | |
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
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bce0030cs-167bce0030dlm2804+9 | |
Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
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tpc6k01hmg01crg02crg07+16 | |
DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
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rej16g0002-2200diode marking s4 59adiode 1n4148 ll-34zener diode sod-323 marking code a2+7 | |
marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
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hvd141/142hzu16hzu10hzu18+16 | |
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
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od-80od123/323ot-23ot346+16 | |