61001EA Search Results

TLG145K

Abstract: TLR145K TLR144K TLR143 TLR143K toshiba suffix TLR146K TLG147K TLR146 TLG143K
Contextual Info: TOSHIBA TLG14D K,TLR14D K TOSHIBA LED LAMP TLG143K, TLG144K, TLG145K, TLG147K, TLR140K TLR143K, TLR144K, TLR145K, TLR146K, TLR147K LED LAMP WITH BRACKET MAXIM UM RATINGS Ta= 25°C CHARACTERISTIC Forward Current RED GREEN Reverse Voltage RED Power Dissipation

Contextual Info: TOSHIBA TENTATIVE TLRH247 TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InGaAiP RED LIGHT EMISSION TLRH247 Unit in mm InGaAfP RED LED Elliptical Lens : Colorless Clear Lens Wide Radiation Low Drive Current, High Intensity Red Light Emission Plastic Molded Colorless Clear Lens Provides for High Contrast

TLG373

Abstract: TLR372 mcd 5x7 led display TLG-373 TLR-372 TLR373 TL-R led TOSHIBA TLG-372 tlg372
Contextual Info: TOSHIBA TLG372,TLG373,TLR372,TLR373 TOSHIBA LED DISPLAY TLG372, TLG373, TLR372, TLR373 5X7 DOT MATRIX LED DISPLAY • • • • • 6.0mm 0.24” Character Height. X-Y m atrix connection. (Multiplex drive) 36 light em itting diodes including decimal point.

05NU42

Contextual Info: TOSHIBA 05NU42 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NU42 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = io o o v m .

100L

Abstract: 2SC4250 5962A
Contextual Info: TO SHIBA 2SC4250 TOSHIBA TRANSISTOR TV VHF MIXER APPLICATIONS. SILICON NPN EPITAXIAL PLANAR TYPE 2SC4250 U nit in mm 2.1 ±0.1 • High Conversion Gain : Gce = 25dB Typ. • Low Reverse Transfer Capacitance : Cre = 0.45pF (Typ.) MAXIMUM RATINGS (Ta = 25°C)

MG25Q1BS11

Contextual Info: MG25Q1BS11 TOSHIBA MG25Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage : V£E(sat) = 2.7V (Max.) Enhancement-Mode

Contextual Info: TOSHIBA 2SK2845 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2845 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance

transistor toshiba marking hf

Abstract: 2SA1162 2SC2712
Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)

MG15Q6ES42

Abstract: MG15Q 15Q6ES42
Contextual Info: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

2SK210

Abstract: marking ADMI
Contextual Info: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure

OK304

Abstract: 2sc2216
Contextual Info: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV232 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE 1 S V2 3 2 • High Capacitance Ratio : C2V / C25V = 10.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner. Unit in mm

Contextual Info: 2SC5110 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC2349

Contextual Info: TOSHIBA 2SC2349 TOSHIBA TRANSISTOR TV VHF OSCILLATOR APPLICATIONS. SILICON NPN EPITAXIAL PLANAR TYPE 2SC2349 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current

a1091 transistor

Abstract: a1091 R transistor 2SA1091 A1091 vqe 14 display transistor a1091 2SC2551
Contextual Info: 2SA1091 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 091 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS . 5.1 M AX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • •

Contextual Info: GT20J311 TOSHIBA TENTATIVE TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT20J311 HIGH P O W ER SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : t f = 0.30/iS Max. Low Saturation Voltage : V q e ( s a t ) = 2.7V (Max.)

2SA562TM

Abstract: 2SC1959
Contextual Info: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA

transistor 2SB673

Abstract: 2SB673 2SB675 2SD635 transistor 2SB673 equivalent transistor Toshiba transistor NPN Ic 50A 2SD633 AC75
Contextual Info: TOSHIBA 2SD633,2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD633, 2SD635 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • High DC Current Gain : hjPE = 2000 Min. • Low Saturation Voltage :

MIG25Q806H

Abstract: MIG25Q806HA
Contextual Info: TOSHIBA MIG25Q806H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG25Q806H, MIG25Q806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter Power Circuits and Thermistor in One Package.

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)

MG100J1BS11

Abstract: c40f
Contextual Info: MG100J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT MG 100J1B S 1 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • High Input Impednace H ighspeed : tf=1.0/«s Max. (l£ = 100A) Low Saturation Voltage : V cE(sat) = 2-?V (Max.) (IC = 100A)

2SC5386

Abstract: 2-16E3A 2sc538
Contextual Info: TOSHIBA 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS • • • • LD 15.5 ± 0.5 r- _ . O '* High Voltage

Contextual Info: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)

Contextual Info: TOSHIBA 2SK2033 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE i <; ic ? n 3 3 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage Excellent Switching Times • • Small Package.