2SA1382 Search Results

Contextual Info: TO SHIBA 2SA1382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 382 PO W ER AM PLIFIER APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX • High DC Current Gain : hyg = 150~400 1(3= —0.5A • Low Saturation Voltage : V cE(sat) = -0 .5 V (MAX.) (IC = - 1A)

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

2SA1382

Abstract: A1382
Contextual Info: TO SH IBA 2SA1382 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS . • • 5.1 MAX High DC Current Gain : hFE = 150-400 Ic = -0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)

Contextual Info: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

Contextual Info: SILICON PNP EPITAXIAL PLANAR TYPE 2SA1382 U nit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS • • • High DC Current Gain : hpE = 150~400 d c = —0.5A Low Saturation Voltage : VCE sat)=-0.5V (MAX.) (IC= - 1 A ) High Speed Switching : tgtg = 1.0/us (TYP.)

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

2SA1382

Abstract: A1382
Contextual Info: TO SH IBA 2SA1382 2 S A 1 382 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm 5.1 MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 150-400 Ic = -0.5A Low Saturation Voltage : V eE(sat)=-ü-5V (M A Ä .)U C = - l A )

Contextual Info: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1382 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1382 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)

Contextual Info: T O SH IB A 2SA1382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 382 POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS U n it in mm 5.1 M AX H igh DC C u rre n t G ain : h FE = 150-400 IC = -0.5A • Low S a tu ra tio n V oltage

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243