MG15Q Search Results

Contextual Info: T O S H IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92 .7±0.6 • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode

MG15Q6ES42

Abstract: MG15Q 15Q6ES42
Contextual Info: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: T O SH IB A MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: TOSHIBA MG15Q6ES50A TENTATIVE TOSHIBA GTR MODULE M i 1 RO HIGH PO W ER SWITCHING APPLICATIONS SILICON N CHANNEL IGBT ES 5 0A MOTOR CONTROL APPLICATIONS • H ig h In p u t Im pedance • H ig h Speed : tf =0.3^8 (M ax. Inductive Load • Low Satu ration Voltage

DIODE i2t

Abstract: MG15Q6ES42
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)

Contextual Info: T O SH IB A MG15Q6ES42 MTi1 ç n fi F<;4 ? TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode

MG15Q6ES42

Contextual Info: MG15Q6ES42 Unit in mm HIGH POW ER SW ITCHING APPLICATION S. M OTOR CO N TR O L A PPLICATION S. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage : v CE sat =4.0V (Max.) • High Speed: tf=0.5//s (Max.)

Contextual Info: TO SHIBA TENTATIVE MG15Q6ES50A M G 1 5 Q ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

MG15Q6ES50

Abstract: 15Q6ES50
Contextual Info: TOSHIBA MG15Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG15Q6ES51

Abstract: 15Q6ES51 transistor bc 930
Contextual Info: TOSHIBA MG15Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG15Q6ES42

Contextual Info: T O SH IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode

MG15Q6ES50

Abstract: MG15Q6ES50A 1.5A COMMON CATHODE
Contextual Info: TOSHIBA MG15Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: TO SHIBA MG15Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG15Q6ES50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.

STR30125

Abstract: B 1403 N mg15q6es42
Contextual Info: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5 Q 6 E S 4 2 U nit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 7± 0 .g , T.SiCl.^ 7-S±t?.3 7.5±0.3i 5.5Í0.3 1 14±0.3 I Ä 3 14±0.3 l0.5t X8 , 2 -0 5 • The Electrodes are Isolated from Case.

MG15

Abstract: MG15Q6ES51A mg15q6es51
Contextual Info: TOSHIBA MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A MG15Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fnU nfiF ^li • ■ MF- lap ta «v v ■ m a HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

MG200J2YS50

Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,