MG15 Search Results

MG15G1AL3

Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)

MG150H2CL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)

MG15D6EM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

MG150Q2YS40

Abstract: CV200
Contextual Info: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Ic=150A)

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

MG150M2CK1

Abstract: CW801
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . Power Translators and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=150A)

ic 393

Contextual Info: TOSHIBA MG150J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG150J2YS1

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150J2YS1 HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N TROL APP LICATIONS. . High Input Impedance . High Speed : tf~0. 35jis Max. trr-O.25 m 5 (Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode

Contextual Info: T O SH IB A MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.

MG150Q2YK1

Contextual Info: MG150Q2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.

50J2Y

Abstract: 50J2YS50
Contextual Info: T O SH IB A MG150J2YS50 MG1 50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - f S S A ± 0 .3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG150H2YS1

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG150H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0us Max. trr=0.5us (Max.) Low Saturation Voltage : VcE(Sat)=5.0V(Max,ï Enhancement-Mode Includes a Complete Half Bridge in One

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150G2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE=100 Min. (Ic=150A) . Low Saturation Voltage

MG15H6ES1

Contextual Info: MG15H6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APPLICATIONS. Unit in mm M O T O R C O N T R O L A P P LICATIONS. . The Electrodes are Isolated from Case. . 6 IGBTs are Built: Into 1 Package. . Enhancement-Mode . Low Saturation Voltage

mg150h2yl1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hpE= 80 Min. (Ic=150A) . Low Saturation Voltage

MG150H1FL1

Abstract: IQ1000 IC280 MG150H
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H1FL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic=150A) . Low Saturation Voltage

MG15H1AL1

Abstract: NPN Transistor 1.5A 600V
Contextual Info: G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15H1AL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current: Gain : hFE=100 Min. (Ic=15A) . Low Saturation Voltage : VcE(sat)=2V(Max.) (Ic=15A)

MG150

Abstract: MG150Q2YS40 56i2
Contextual Info: TOSHIBA MG150Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

MG150Q2YS40

Contextual Info: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

MG150J2YS50

Abstract: mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50
Contextual Info: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode

MG150J1JS50

Abstract: mg150j1
Contextual Info: MG150J1JS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J1JS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~TD 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR TECHNICAL DATA D Ê J 70772SO 001bS7M H 90D 16274 H G 1 5 0 H 1 Ï LI MG15 0H2CL1 M G 1 5 0 H 2 D L 1 hJ Eu H ffi o m h o £ O TOSHIBA CORPORATION G T I A2A DTr-33-‘35 TOSHIBA _

Contextual Info: TO SHIBA MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V q e (sat) = 2.7V (Max.) (Iq = 150A)