50J1JS50 Search Results

ic 393

Contextual Info: TOSHIBA 50J1JS50 MG1 50J1JS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W ER SWITCHING APPLICATIONS. U nit in mm M O TO R CONTROL APPLICATIONS. 2 - ¿5 .« ± 0 .3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

TRANSISTOR BJ 003

Abstract: MG150J1JS50 60A4
Contextual Info: TOSHIBA 50J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 0 5 .4* 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: T O S H IB A 50J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-ûi5.4±0.3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One

Contextual Info: T O S H IB A 50J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-fSi4±0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One