CREE MICROWAVE Search Results

CREE MICROWAVE Result Highlights (4)

Part	Manufacturer	Description	Download
SFELF10M7KAB0-B0	Murata Manufacturing Co Ltd	Ceramic BPF, 1 Section(s) Min, 1 Section(s) Max, 10.7MHz	PDF
CFUKG455KF4X-R0	Murata Manufacturing Co Ltd	Ceramic BPF, 0.455MHz	PDF
CFULB455KG1Y-B0	Murata Manufacturing Co Ltd	Ceramic BPF, 0.455MHz	PDF
CFWLB455KBFA-B0	Murata Manufacturing Co Ltd	Ceramic BPF, 0.455MHz	PDF

CREE MICROWAVE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Gan on silicon transistor Abstract: Microwave Devices CDPA21480 MESFET CGH21240F LDMOS NONLINEAR digital Pre-distortion silicon carbide NONLINEAR MODEL LDMOS Contextual Info: AWR Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70% Microwave Office Capabilities Provide First-Pass Design Success of Complex 2.1-GHz Circuits Application: Gallium Nitride-based CUSTOMER BACKGROUND While Cree, Inc., based in Durham, NC, is best known outside the microwave	Original	gan on silicon transistor microwave devices cdpa21480 mesfet +5cgh21240f ldmos nonlinear digital pre-distortion silicon carbide nonlinear model ldmos	PDF
CMPA2560025F Abstract: CMPA2560025F-TB c08bl242x Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +1c08bl242x	PDF
CMPA0060002D Abstract: bonding wire cree Contextual Info: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon	Original	cmpa0060002d cmpa00 bonding wire cree	PDF
CMPA2735075F Abstract: IDQ Freq Products RF-35-0100-CH Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f 78001sa +2idq freq products rf-35-0100-ch	PDF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 6002ree	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb	PDF
CMPA2560025F Abstract: CMPA2560025F-TB JESD22 A114D Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f cmpa2560025f-tb +2jesd22 a114d	PDF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f	PDF
CMPA2560025F Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25 cmpa2560025f	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f	PDF
Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2735075f cmpa27 35075f	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025fs cmpa2560025f-tb +3cree microwave c08bl242x c08bl242x-5un-x0t	PDF
Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa5585025f cmpa55 85025f	PDF

Contextual Info: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon	Original	cmpa0060002d cmpa00	PDF
CMPA2560025F Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408 Contextual Info: PRELIMINARY CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f rf-35-0100-ch c08bl242x cree microwave +2cmpa2560025f-tb transistor on 4408	PDF
Contextual Info: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2060025d cmp2060025d cmpa20	PDF
CMPA2560025F Abstract: 920pF Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025f cmpa25 60025f 920pf	PDF
CMPA2060025D Contextual Info: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2060025d cmp2060025d cmpa20	PDF
Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa2560025d cmp2560025d cmpa25	PDF
Contextual Info: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060002f	PDF
Contextual Info: PRELIMINARY CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon	Original	cmpa0060002d cmpa00	PDF
TBTH06M20 Abstract: CMPA0060025F Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f +1tbth06m20	PDF
CMPA0060025F Abstract: RF-35-0100-CH CMPA0060025F-TB Contextual Info: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	cmpa0060025f hz-6000 cmpa00 60025f +2rf-35-0100-ch cmpa0060025f-tb	PDF

CREE MICROWAVE Search Results

CREE MICROWAVE Result Highlights (4)

CREE MICROWAVE Datasheets Context Search

Gan on silicon transistor

CMPA2560025F

CMPA0060002D

CMPA2735075F

CMPA2560025F

CMPA2560025F

CMPA2560025F

CMPA2560025F

CMPA2560025F

CMPA2560025F

CMPA2060025D

TBTH06M20

CMPA0060025F