CGH21240F Search Results

CGH21240F Datasheets (4)

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Wolfspeed

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH21240F		Wolfspeed	GAN HEMT 28V 1.8-2.1GHZ	Original	PDF	1.72MB
CGH21240F		Wolfspeed	GAN HEMT 28V 1.8-2.1GHZ	Original	PDF	1.72MB
CGH21240F-AMP		Wolfspeed	CGH21240F DEV BOARD WITH HEMT	Original	PDF	1.72MB
CGH21240F-AMP		Wolfspeed	CGH21240F DEV BOARD WITH HEMT	Original	PDF	1.72MB

CGH21240F Price and Stock

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MACOM


MACOM CGH21240F Trans RF MOSFET N-CH 120V 24A 3-Pin Case 440117
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH21240F				10	1 - 10 - 100 $844.82 1000 $844.82 10000 $844.82	Buy Now
MACOM CGH21240F-AMP CGH21240F RF FET Evaluation Board
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH21240F-AMP				2	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH21240F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	cdpa21480 cgh21240f cgh09120f cgh25120f +6cgh27060f ofdm predistortion cgh55030f 440117 cgh21120f cgh27015f	PDF
Contextual Info: CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	cgh21240f cgh2124	PDF
CGH21240F Abstract: transistor 17556 ATC600F CGH2124 17556 transistor ATC600S CGH21240F-TB JESD22 RO4350 13707 Contextual Info: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	cgh21240f cgh2124 transistor 17556 atc600f +617556 transistor atc600s cgh21240f-tb jesd22 ro4350 13707	PDF
ATC600F Abstract: ATC600S CGH2124 CGH21240F CGH21240F-TB RO4350 Contextual Info: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	cgh21240f cgh2124 atc600f atc600s +2cgh21240f-tb ro4350	PDF
CGH21240F Abstract: transistor 17556 Contextual Info: CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for	Original	cgh21240f cgh2124 cgh21240f-tb transistor 17556	PDF
Gan on silicon transistor Abstract: Microwave Devices CDPA21480 MESFET CGH21240F LDMOS NONLINEAR digital Pre-distortion silicon carbide NONLINEAR MODEL LDMOS Contextual Info: AWR Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70% Microwave Office Capabilities Provide First-Pass Design Success of Complex 2.1-GHz Circuits Application: Gallium Nitride-based CUSTOMER BACKGROUND While Cree, Inc., based in Durham, NC, is best known outside the microwave	Original	gan on silicon transistor microwave devices cdpa21480 mesfet +5cgh21240f ldmos nonlinear digital pre-distortion silicon carbide nonlinear model ldmos	PDF