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CGH55030F Datasheets (5)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH55030F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V 440166	Original	PDF	780.39KB
CGH55030F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 440166	Original	PDF		10
CGH55030F2-AMP		Wolfspeed	CGH55030F2 DEV BOARD WITH HEMT	Original	PDF	1.48MB
CGH55030F2-AMP		Wolfspeed	CGH55030F2 DEV BOARD WITH HEMT	Original	PDF	2.61MB
CGH55030F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL HEMT AMPLIFIER	Original	PDF		10

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MACOM


MACOM CGH55030F2-AMP AMPLIFIER, 5.4-5.9GHZ, CGH55030F2 GAN HEMT IS INCL
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Richardson RFPD	CGH55030F2-AMP				2	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH55030F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH55030 Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L Contextual Info: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal	Original	cgh55030f cgh5503 cgh55030 256qam +2cgh55030f-tb atc600l	PDF
CGH5503 Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	cgh55030f1 cgh55030p1 cgh55030f1/cgh55030p1 cgh5503 +8cgh55 030f1 cgh55030 cgh55030-tb s 0934 ro4350b atc600l 128-qam	PDF
32QAM circuit Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	cgh55030f1 cgh55030p1 cgh55030f1/cgh55030p1 cgh5503 +7cgh55 030f1 32qam circuit cgh55030 cgh55030-tb 440166 atc600l	PDF
Contextual Info: PRELIMINARY CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal	Original	cgh55030f cgh5503	PDF
CGH55030F2 Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+3cgh5503 cgh55 030f2	PDF
CGH55030F2 Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+7cgh5503 cgh55 030f2 cgh55030 cgh55030-tb jesd22 cgh55030p2 application note	PDF
32QAM circuit Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	cgh55030f1 cgh55030p1 cgh55030f1/cgh55030p1 cgh5503 +7cgh55 030f1 32qam circuit atc600s 32qam modulation cgh55030 cgh55030-tb	PDF
RO4350B Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	cgh55030f1 cgh55030p1 cgh55030f1/cgh55030p1 cgh5503 +3cgh55 030f1 ro4350b	PDF
hemt .s2p Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+4cgh5503 cgh55 030f2 hemt .s2p	PDF
CGH55030P2 Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22 Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+6cgh5503 cgh55 030f2 cgh55030 cgh55030-tb jesd22	PDF
ATC600L Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+9cgh5503 cgh55 030f2 atc600l atc600s cgh55030 cree driver cgh40025f cgh55030-tb	PDF
RO4350B Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1	Original	cgh55030f1 cgh55030p1 cgh55030f1/cgh55030p1 cgh5503 +3cgh55 030f1 ro4350b	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	cdpa21480 cgh21240f cgh09120f cgh25120f +6cgh27060f ofdm predistortion cgh55030f 440117 cgh21120f cgh27015f	PDF