CGH55030P2 Search Results

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MACOM CGH55030P2 Trans RF MOSFET N-CH 120V 3A 3-Pin Case 440196
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGH55030P2				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CGH55030P2 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	CGH55030P2		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH55030P2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH55030F2 Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+3cgh5503 cgh55 030f2	PDF
CGH55030F2 Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+7cgh5503 cgh55 030f2 cgh55030 cgh55030-tb jesd22 cgh55030p2 application note	PDF
hemt .s2p Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+4cgh5503 cgh55 030f2 hemt .s2p	PDF
CGH55030P2 Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22 Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+6cgh5503 cgh55 030f2 cgh55030 cgh55030-tb jesd22	PDF
ATC600L Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55 Contextual Info: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/	Original	cgh55030f2 cgh55030p2 cgh55030f2/cgh55030p2 cgh55030f2/+9cgh5503 cgh55 030f2 atc600l atc600s cgh55030 cree driver cgh40025f cgh55030-tb	PDF